Wang Qingmeng, Cheng Xiaomin, Liu Zhi, Lv Zean, Cheng Qianju
School of Mechanical and Electrical Engieering, Huanggang Normal University, Huangang 438000, China.
Hubei Zhongke Research Institute of Industrial Technology, Huangang 438000, China.
Materials (Basel). 2020 Nov 30;13(23):5461. doi: 10.3390/ma13235461.
The effect of gallium on the oxide film structure and overall oxidation resistance of low melting point Sn-Bi-Zn alloys was investigated under air atmosphere using thermogravimetric analyses. The liquid alloys studied had a Ga content of 1-7 wt.%. The results showed that the growth rates of the surface scale formed on the Sn-Bi-Zn-Ga alloys conformed to the parabolic law. The oxidation resistance of Sn-Bi-Zn alloys was improved by Ga addition and the activation energies increased from 12.05 kJ∙mol to 22.20 kJ∙mol. The structure and elemental distribution of the oxide film surface and cross-section were found to become more complicated and denser with Ga addition. Further, the results of X-ray photoelectron spectroscopy and X-ray diffraction show that Ga elements accumulate on the surface of the liquid metal to form oxides, which significantly slowed the oxidation of the surface of the liquid alloy.
在空气气氛下,采用热重分析法研究了镓对低熔点Sn-Bi-Zn合金氧化膜结构及整体抗氧化性能的影响。所研究的液态合金中镓的含量为1-7 wt.%。结果表明,Sn-Bi-Zn-Ga合金表面形成的氧化皮生长速率符合抛物线规律。添加镓提高了Sn-Bi-Zn合金的抗氧化性能,活化能从12.05 kJ∙mol增加到22.20 kJ∙mol。发现随着镓的添加,氧化膜表面和横截面的结构及元素分布变得更加复杂和致密。此外,X射线光电子能谱和X射线衍射结果表明,镓元素在液态金属表面富集形成氧化物,这显著减缓了液态合金表面的氧化。