Zhang Yong, Xue Fenghua, Tang Chenjia, Li Jiaming, Liao Liyang, Li Lun, Liu Xiaoyang, Yang Yumeng, Song Cheng, Kou Xufeng
School of Information Science and Technology, ShanghaiTech University, Shanghai 200031, China.
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
ACS Nano. 2020 Dec 22;14(12):17396-17404. doi: 10.1021/acsnano.0c07598. Epub 2020 Dec 10.
Spin-orbit coupling (SOC), the relativistic effect describing the interaction between the orbital and spin degrees of freedom, provides an effective way to tailor the spin/magnetic orders using electrical means. Here, we report the manipulation of the spin-orbit interaction in the lattice-matched InSb/CdTe heterostructures. Owing to the energy band bending at the heterointerface, the strong Rashba effect is introduced to drive the spin precession where pronounced weak antilocalization cusps are observed up to 100 K. With effective quantum confinement and suppressed bulk conduction, the SOC strength is found to be enhanced by 75% in the ultrathin InSb/CdTe film. Most importantly, we realize the electric-field control of the interfacial Rashba effect using a field-effect transistor structure and demonstrate the gate-tuning capability which is 1-2 orders of magnitude higher than other materials. The adoption of the InSb/CdTe integration strategy may set up a general framework for the design of strongly spin-orbit coupled systems that are essential for CMOS-compatible low-power spintronics.
自旋轨道耦合（SOC）是一种描述轨道自由度与自旋自由度之间相互作用的相对论效应，它提供了一种利用电学手段来调控自旋/磁序的有效方法。在此，我们报道了在晶格匹配的InSb/CdTe异质结构中对自旋轨道相互作用的操控。由于异质界面处的能带弯曲，引入了强Rashba效应来驱动自旋进动，在高达100 K的温度下观察到明显的弱反局域化尖峰。通过有效的量子限制和体传导抑制，发现超薄InSb/CdTe薄膜中的SOC强度提高了75%。最重要的是，我们利用场效应晶体管结构实现了对界面Rashba效应的电场控制，并展示了比其他材料高1 - 2个数量级的栅极调谐能力。采用InSb/CdTe集成策略可能会为强自旋轨道耦合系统的设计建立一个通用框架，这对于与CMOS兼容的低功耗自旋电子学至关重要。
