Liu Jiuming, Liao Liyang, Rong Bin, Wu Yuyang, Ruan Hanzhi, Zhang Yu, Zhi Zhenghang, Liu Xinqi, Huang Puyang, Yao Shan, Cai Xinyu, Tang Chenjia, Yao Qi, Sun Lu, Yang Yumeng, Yu Guoqiang, Che Renchao, Kou Xufeng
School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
Institute for Solid State Physics, University of Tokyo, Kashiwa 277-8581, Japan.
ACS Appl Mater Interfaces. 2024 Aug 28;16(34):45687-45694. doi: 10.1021/acsami.4c08159. Epub 2024 Aug 20.
Magnetoresistance effects are crucial for understanding the charge-spin transport as well as propelling the advancement of spintronic applications. Here, we report the coexistence of magnetic-moment-dependent (MD) and magnetic-field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to different spin scattering mechanisms, these two types of non-reciprocal charge transports show opposite polarities with respect to the magnetic field direction, which further enables an effective phase modulation of the angular-dependent magnetoresistance. The demonstration of the tunable UMR response validates our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic memory and sensor designs.
磁电阻效应对于理解电荷-自旋输运以及推动自旋电子学应用的发展至关重要。在此，我们报道了在CoFeB/InSb/CdTe异质结构中存在依赖于磁矩（MD）和磁场驱动（FD）的单向磁电阻（UMR）效应。InSb的强自旋-轨道耦合以及CoFeB/InSb界面处匹配的阻抗保证了在室温下有明显的MD-UMR效应，而面内磁场与InSb/CdTe界面处的Rashba效应之间的相互作用诱导出了在高场区域占主导的显著FD-UMR信号。此外，由于不同的自旋散射机制，这两种类型的非互易电荷输运相对于磁场方向呈现出相反的极性，这进一步实现了角度相关磁电阻的有效相位调制。可调谐UMR响应的证明证实了我们的CoFeB/InSb/CdTe系统是用于多功能自旋电子学存储器和传感器设计的合适集成构建模块。
