Lee Donggun, Park Jun-Woo, Cho Nam-Kwang, Lee Jinwon, Kim Youn Sang
Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea.
Samsung Display Company, Ltd, 181 Samsung-ro, Tangjeong-myeon, Asan-si, 31454, Chungcheongnam-Do, Republic of Korea.
Sci Rep. 2019 Jul 16;9(1):10323. doi: 10.1038/s41598-019-46752-1.
In a MIS (Metal/Insulator/Semiconductor) structure consisting of two terminals, a systematic analysis of the electrical charge transport mechanism through an insulator is essential for advanced electronic application devices such as next-generation memories based on resistance differences. Herein, we have verified the charge transfer phenomenon in MIOS (Metal/Insulator/Oxide Semiconductor) diodes through a defect engineering of the insulator. By selectively generating the oxygen vacancies in the insulator (AlO), the MIOS diode rectification of the P-Si anode/AlO/IGZO cathode reached 10 at 1.8 V and considerably suppressed the leakage current. Studying the current-voltage characteristics of MIOS diodes shows that the charge carrier transport mechanism can vary depending on the defect density as well as the difference between the CBM (conduction band minimum) of the semiconductor and the oxygen vacancy energy level of the insulator.
在由两个电极组成的金属/绝缘体/半导体（MIS）结构中，对于基于电阻差异的下一代存储器等先进电子应用器件而言，系统分析通过绝缘体的电荷传输机制至关重要。在此，我们通过绝缘体的缺陷工程验证了金属/绝缘体/氧化物半导体（MIOS）二极管中的电荷转移现象。通过在绝缘体（AlO）中选择性地产生氧空位，P - Si阳极/AlO/IGZO阴极的MIOS二极管在1.8 V时的整流比达到10，并显著抑制了漏电流。对MIOS二极管电流 - 电压特性的研究表明，电荷载流子传输机制会因缺陷密度以及半导体导带最小值（CBM）与绝缘体氧空位能级之间的差异而有所不同。
