Kim Hyeong-U, Kim Mansu, Seok Hyunho, Park Kyu-Young, Moon Ji-Yun, Park Jonghwan, An Byeong-Seon, Jung Hee Joon, Dravid Vinayak P, Whang Dongmok, Lee Jae-Hyun, Kim Taesung
Plasma Engineering Laboratory, Korea Institute of Machinery and Materials (KIMM), Daejeon, 34103, Korea.
School of Advanced Material Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Korea.
ChemSusChem. 2021 Mar 5;14(5):1344-1350. doi: 10.1002/cssc.202002578. Epub 2021 Jan 19.
The octahedral structure of 2D molybdenum disulfide (1T-MoS ) has attracted attention as a high-efficiency and low-cost electrocatalyst for hydrogen production. However, the large-scale synthesis of 1T-MoS films has not been realized because of higher formation energy compared to that of the trigonal prismatic phase (2H)-MoS . In this study, a uniform wafer-scale synthesis of the metastable 1T-MoS film is performed by sulfidation of the Mo metal layer using a plasma-enhanced chemical vapor deposition (PE-CVD) system. Thus, plasma-containing highly reactive ions and radicals of the sulfurization precursor enable the synthesis of 1T-MoS at 150 °C. Electrochemical analysis of 1T-MoS shows enhanced catalytic activity for the hydrogen evolution reaction (HER) compared to that of previously reported MoS electrocatalysts 1T-MoS does not transform into stable 2H-MoS even after 1000 cycles of HER. The proposed low-temperature synthesis approach may offer a promising solution for the facile production of various metastable-phase 2D materials.
二维二硫化钼（1T-MoS₂）的八面体结构作为一种高效低成本的析氢电催化剂受到了关注。然而，由于与三角棱柱相（2H）-MoS₂相比形成能更高，1T-MoS₂薄膜的大规模合成尚未实现。在本研究中，使用等离子体增强化学气相沉积（PE-CVD）系统通过对Mo金属层进行硫化来实现亚稳态1T-MoS₂薄膜的均匀晶圆级合成。因此，含等离子体的硫化前驱体的高活性离子和自由基能够在150 °C下合成1T-MoS₂。1T-MoS₂的电化学分析表明，与先前报道的MoS₂电催化剂相比，其析氢反应（HER）的催化活性增强。即使经过1000次HER循环，1T-MoS₂也不会转变为稳定的2H-MoS₂。所提出的低温合成方法可能为各种亚稳相二维材料的简便生产提供一个有前景的解决方案。
