Romanov Roman I, Zabrosaev Ivan V, Kozodaev Maxim G, Yakubovsky Dmitry I, Tatmyshevskiy Mikhail K, Timofeev Aleksey A, Doroshina Natalia V, Novikov Sergey M, Volkov Valentyn S, Markeev Andrey M
Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, Dolgoprudny 141701, Moscow region, Russia.
Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia.
ACS Omega. 2023 May 3;8(19):16579-16586. doi: 10.1021/acsomega.2c06794. eCollection 2023 May 16.
Heterogeneous nanostructures composed of metastable tetragonal 1T-MoS and stable hexagonal 2H-MoS phases are highly promising for a wide range of applications, including catalysis and ion batteries, due to the high electrical conductivity and catalytic activity of the 1T phase. However, a controllable synthesis of stabilized 1T-MoS films over the wafer-scale area is challenging. In this work, a metal-organic chemical vapor deposition process allowing us to obtain ultrathin MoS films containing both 1T and 2H phases and control their ratio through rhenium doping was suggested. As a result, MoReS films with a 1T-MoS fraction up to ≈30% were obtained, which were relatively stable under normal conditions for a long time. X-ray photoelectron spectroscopy and Raman spectroscopy also indicated that the 1T-MoS phase fraction increased with rhenium concentration increase saturating at Re concentrations above 5 at. %. Also, its concentration was found to significantly affect the film resistivity. Thus, the resistivity of the film containing approximately 30% of the 1T phase was about 130 times lower than that of the film without the 1T phase.
由亚稳态四方1T-MoS和稳定六方2H-MoS相组成的异质纳米结构,由于1T相具有高电导率和催化活性,在包括催化和离子电池在内的广泛应用中极具前景。然而,在晶圆级面积上可控合成稳定的1T-MoS薄膜具有挑战性。在这项工作中,提出了一种金属有机化学气相沉积工艺,该工艺使我们能够获得同时包含1T和2H相的超薄MoS薄膜,并通过铼掺杂来控制它们的比例。结果,获得了1T-MoS含量高达约30%的MoReS薄膜,这些薄膜在正常条件下能长时间相对稳定。X射线光电子能谱和拉曼光谱还表明,1T-MoS相分数随铼浓度的增加而增加,在铼浓度高于5原子%时达到饱和。此外,发现其浓度会显著影响薄膜电阻率。因此,含有约30% 1T相的薄膜的电阻率比不含1T相的薄膜低约130倍。