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通过在金属有机化学气相沉积法制备的二硫化钼薄膜中进行铼掺杂来稳定纳米尺寸的1T相

Stabilization of the Nano-Sized 1T Phase through Rhenium Doping in the Metal-Organic CVD MoS Films.

作者信息

Romanov Roman I, Zabrosaev Ivan V, Kozodaev Maxim G, Yakubovsky Dmitry I, Tatmyshevskiy Mikhail K, Timofeev Aleksey A, Doroshina Natalia V, Novikov Sergey M, Volkov Valentyn S, Markeev Andrey M

机构信息

Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, Dolgoprudny 141701, Moscow region, Russia.

Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology (National Research University), Dolgoprudny 141700, Russia.

出版信息

ACS Omega. 2023 May 3;8(19):16579-16586. doi: 10.1021/acsomega.2c06794. eCollection 2023 May 16.

Abstract

Heterogeneous nanostructures composed of metastable tetragonal 1T-MoS and stable hexagonal 2H-MoS phases are highly promising for a wide range of applications, including catalysis and ion batteries, due to the high electrical conductivity and catalytic activity of the 1T phase. However, a controllable synthesis of stabilized 1T-MoS films over the wafer-scale area is challenging. In this work, a metal-organic chemical vapor deposition process allowing us to obtain ultrathin MoS films containing both 1T and 2H phases and control their ratio through rhenium doping was suggested. As a result, MoReS films with a 1T-MoS fraction up to ≈30% were obtained, which were relatively stable under normal conditions for a long time. X-ray photoelectron spectroscopy and Raman spectroscopy also indicated that the 1T-MoS phase fraction increased with rhenium concentration increase saturating at Re concentrations above 5 at. %. Also, its concentration was found to significantly affect the film resistivity. Thus, the resistivity of the film containing approximately 30% of the 1T phase was about 130 times lower than that of the film without the 1T phase.

摘要

由亚稳态四方1T-MoS和稳定六方2H-MoS相组成的异质纳米结构,由于1T相具有高电导率和催化活性,在包括催化和离子电池在内的广泛应用中极具前景。然而,在晶圆级面积上可控合成稳定的1T-MoS薄膜具有挑战性。在这项工作中,提出了一种金属有机化学气相沉积工艺,该工艺使我们能够获得同时包含1T和2H相的超薄MoS薄膜,并通过铼掺杂来控制它们的比例。结果,获得了1T-MoS含量高达约30%的MoReS薄膜,这些薄膜在正常条件下能长时间相对稳定。X射线光电子能谱和拉曼光谱还表明,1T-MoS相分数随铼浓度的增加而增加,在铼浓度高于5原子%时达到饱和。此外,发现其浓度会显著影响薄膜电阻率。因此,含有约30% 1T相的薄膜的电阻率比不含1T相的薄膜低约130倍。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/40ae/10193411/dbdc0ca16363/ao2c06794_0002.jpg

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