Hijazi Hadi, Zeghouane Mohammed, Dubrovskii Vladimir G
Faculty of Laser Photonics and Optoelectronics, ITMO University, Kronverkskiy prospect 49, 197101 Saint Petersburg, Russia.
CNRS, SIGMA Clermont, Institut Pascal, Université Clermont Auvergne, F-63000 Clermont-Ferrand, France.
Nanomaterials (Basel). 2021 Jan 2;11(1):83. doi: 10.3390/nano11010083.
Based on a thermodynamic model, we quantify the impact of adding silicon atoms to a catalyst droplet on the nucleation and growth of ternary III-V nanowires grown via the self-catalyzed vapor-liquid-solid process. Three technologically relevant ternaries are studied: InGaAs, AlGaAs and InGaN. For As-based alloys, it is shown that adding silicon atoms to the droplet increases the nanowire nucleation probability, which can increase by several orders magnitude depending on the initial chemical composition of the catalyst. Conversely, silicon atoms are found to suppress the nucleation rate of InGaN nanowires of different compositions. These results can be useful for understanding and controlling the vapor-liquid-solid growth of ternary III-V nanowires on silicon substrates as well as their intentional doping with Si.
基于一个热力学模型，我们量化了向催化剂液滴中添加硅原子对通过自催化气-液-固过程生长的三元III-V族纳米线的成核和生长的影响。研究了三种具有技术相关性的三元体系：铟镓砷（InGaAs）、铝镓砷（AlGaAs）和铟镓氮（InGaN）。对于基于砷的合金，研究表明向液滴中添加硅原子会增加纳米线的成核概率，根据催化剂的初始化学成分，该概率可能会增加几个数量级。相反，发现硅原子会抑制不同成分的铟镓氮纳米线的成核速率。这些结果对于理解和控制硅衬底上三元III-V族纳米线的气-液-固生长以及对其进行有意的硅掺杂可能是有用的。
