Université Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal, F-63000 Clermont-Ferrand, France.
Nanotechnology. 2019 Jan 25;30(4):044001. doi: 10.1088/1361-6528/aaec39. Epub 2018 Nov 20.
Homogenous InGaN nanowires with a controlled indium composition up to 90% are grown on GaN/c-AlO templates by catalyst-free hydride vapor phase epitaxy using InCl and GaCl as group III element precursors. The influence of the partial pressures on the growth rate and composition of InGaN nanowires is investigated. It is shown how the InN mole fraction in nanowires can be finely tuned by changing the vapor phase composition. Thermodynamic calculations are presented that take into account different interconnected reactions in the vapor phase and show a good agreement with the compositional data. Energy dispersive x-ray spectroscopy profiles performed on single nanowires show a homogenous indium composition along the entire nanowire length. X-ray diffraction measurements performed on nanowires arrays confirm these data. High-resolution transmission electron microscopy analysis shows the wurtzite crystal structure with a reduced defect density for InGaN nanowires with the highest indium content.
同质 GaN 模板上生长的具有高达 90%铟成分的 GaN/c-AlO 催化剂自由的氢化物气相外延使用 InCl 和 GaCl 作为 III 族元素前体。研究了分压对 InGaN 纳米线生长速率和组成的影响。结果表明，通过改变气相组成可以精细调整纳米线中的 InN 摩尔分数。提出了考虑气相中不同相互连接反应的热力学计算，并与组成数据吻合良好。在单根纳米线上进行的能量色散 X 射线能谱分析显示，沿整个纳米线长度铟成分均匀。在纳米线阵列上进行的 X 射线衍射测量证实了这些数据。高分辨率透射电子显微镜分析表明，具有最高铟含量的 InGaN 纳米线具有纤锌矿晶体结构，缺陷密度降低。
