High-Performance Indium Gallium Tin Oxide Transistors with an AlO Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the AlO Dielectric Film.

In this work, high-performance amorphous InGaSnO (-IGTO) transistors with an atomic layer-deposited AlO dielectric layer were fabricated at a maximum processing temperature of 150 °C. Hydrogen (H) and excess oxygen (O) in the AlO film, which was controlled by adjusting the oxygen radical density (P: flow rate of O/[Ar+O]) in the radio-frequency (rf) plasma during ALD growth of AlO, significantly affected the performance and stability of the resulting IGTO transistors. The concentrations of H and O in AlO/IGTO stacks according to P were characterized by secondary ion mass spectroscopy, X-ray photoelectron spectroscopy, hard X-ray photoemission spectroscopy, and thermal desorption spectroscopy. The high concentration of H at a low P of 2.5% caused heavy electron doping in the underlying IGTO during thermal annealing at 150 °C, leading to a conductive behavior in the resulting transistor without modulation capability. In contrast, a high P condition of 20% introduced O molecules (or O) into the AlO film, which negatively impacted the carrier mobility and caused anomalous photo-bias instability in the IGTO transistor. Through in-depth understanding of how to manipulate H and O in AlO by controlling the P, we fabricated high-performance IGTO transistors with a high field-effect mobility (μ) of 58.8 cm/Vs, subthreshold gate swing () of 0.12 V/decade, threshold voltage () of 0.5 V, and ratio of ∼10 even at the maximum processing temperature of 150 °C. Simultaneously, the optimized devices were resistant to exposure to external positive gate bias stress (PBS) and negative bias stress (NBS) for 3600 s, where the shifts for exposure to PBS and NBS for this duration were 0.1 V and -0.15 V, respectively.