Noviyana Imas, Lestari Annisa Dwi, Putri Maryane, Won Mi-Sook, Bae Jong-Seong, Heo Young-Woo, Lee Hee Young
School of Materials Science and Engineering, Yeungnam University, Gyeongsan 38541, Korea.
Busan Center, Korea Basic Science Institute, Busan 46742, Korea.
Materials (Basel). 2017 Jun 26;10(7):702. doi: 10.3390/ma10070702.
Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.
采用射频磁控溅射在室温下制备了具有富锌铟锌锡氧化物（IZTO）有源层的顶接触底栅薄膜晶体管（TFT）。制备了烧结陶瓷靶，并用于从摩尔比为In2O3:ZnO:SnO2 = 2:5:1的氧化物粉末混合物中进行沉积。对沉积后的薄膜在不同温度下进行退火处理，以研究其对TFT性能的影响。结果发现，在空气气氛中350℃退火30分钟得到的结果最佳，场效应迁移率高达34 cm2/Vs，亚阈值摆幅最小值为0.12 V/dec。即使经过高达350℃的退火处理，所有IZTO薄膜均为非晶态。
