Mao Ching-Han, Dubey Abhishek, Lee Fang-Jing, Chen Chun-Yen, Tang Shin-Yi, Ranjan Ashok, Lu Ming-Yen, Chueh Yu-Lun, Gwo Shangjr, Yen Ta-Jen
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.
ACS Appl Mater Interfaces. 2021 Jan 27;13(3):4126-4132. doi: 10.1021/acsami.0c15819. Epub 2021 Jan 12.
Atomically thin transition metal dichalcogenides (TMDC) have received much attention due to their wide variety of optical and electronic properties. Among various TMDC materials, molybdenum disulfide (MoS) has been intensely studied owing to its potential applications in nanoelectronics and optoelectronics. However, two-dimensional MoS photodetectors suffer from low responsivity due to low optical cross section. Combining MoS with plasmonic nanostructures can drastically increase scattering cross section and enhance local light-matter interaction. Moreover, suspended MoS has been shown to exhibit higher photoluminescence intensity and strong photogating effect, which can be employed in photodetectors. Herein, we propose an approach to utilize plasmonic nanostructures and physical suspension for 2D MoS photosensing enhancement by hybridizing 2D bilayer MoS, 1D silicon nanowires, and 0D silver nanoparticles. The hybrid structure shows a gateless responsivity of 402.4 A/W at a wavelength of 532 nm, which represents the highest value among the ever reported gateless plasmonic MoS photodetector. The great responsivity and large active area results in an exceptional detectivity of 2.34 × 10 Jones. This study provides a new approach for designing high-performance 2D TMDC-based optoelectronic devices.
原子级薄的过渡金属二硫属化物（TMDC）因其多种多样的光学和电子特性而备受关注。在各种TMDC材料中，二硫化钼（MoS）因其在纳米电子学和光电子学中的潜在应用而受到深入研究。然而，二维MoS光电探测器由于光学截面低而响应度较低。将MoS与等离子体纳米结构相结合可以大幅增加散射截面并增强局部光与物质的相互作用。此外，悬浮的MoS已被证明表现出更高的光致发光强度和强光控效应，这可用于光电探测器。在此，我们提出一种通过将二维双层MoS、一维硅纳米线和零维银纳米颗粒杂交来利用等离子体纳米结构和物理悬浮增强二维MoS光传感的方法。该混合结构在波长532 nm处显示出402.4 A/W的无栅响应度，这是迄今报道的无栅等离子体MoS光电探测器中的最高值。高响应度和大的有源面积导致其探测率高达2.34×10琼斯。本研究为设计基于二维TMDC的高性能光电器件提供了一种新方法。
