Kumar Sunil, Rehman Malik Abdul, Lee Sungwon, Kim Minwook, Hong Hyeryeon, Park Jun-Young, Seo Yongho
Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea.
Graphene Research Institute and HMC, Sejong University, Seoul, 05006, South Korea.
Sci Rep. 2021 Jan 12;11(1):649. doi: 10.1038/s41598-020-80799-9.
An ultrahigh capacity supercapacitor is fabricated using a nano-layered MXene as an active electrode material, and Ni-foil is used as a current collector. The high-quality TiCT obtained from supernatant during etching and washing processes improves the specific capacitance significantly. As another strategy, the surface of Ni-foil is engineered by coating chemical vapor deposition-grown graphene. The graphene grown directly on the Ni-foil is used as a current collector, forming the electrode structure of TiCT/graphene/Ni. The surface passivation of the current collectors has a high impact on charge-transfer, which in turn increases the capacitance of the supercapacitors. It is found that the capacitance of the graphene-based supercapacitors is more than 1.5 times of the capacitance without graphene. A high specific capacitance, ~ 542 F/g, is achieved at 5 mV/s scan rate based on cyclic voltammetry analysis. Also, the graphene-based supercapacitor exhibits a quasi-rectangular form in cyclic voltammetry curves and a symmetric behavior in charge/discharge curves. Furthermore, cyclic stability up to 5000 cycles is confirmed with high capacitance retention at high scan rate 1000 mV/s. A reduced series resistance with a high limit capacitance is revealed by equivalent circuit analysis with the Nyquist plot.
使用纳米层状MXene作为活性电极材料制备了一种超高容量超级电容器,并使用镍箔作为集流体。在蚀刻和洗涤过程中从上清液中获得的高质量TiCT显著提高了比电容。作为另一种策略,通过涂覆化学气相沉积生长的石墨烯对镍箔表面进行了工程处理。直接生长在镍箔上的石墨烯用作集流体,形成TiCT/石墨烯/镍的电极结构。集流体的表面钝化对电荷转移有很大影响,进而增加了超级电容器的电容。发现基于石墨烯的超级电容器的电容是没有石墨烯时电容的1.5倍以上。基于循环伏安法分析,在5 mV/s扫描速率下实现了约542 F/g的高比电容。此外,基于石墨烯的超级电容器在循环伏安曲线中呈现准矩形形状,在充放电曲线中呈现对称行为。此外,在1000 mV/s的高扫描速率下,高达5000次循环的循环稳定性得到证实,且电容保持率高。通过奈奎斯特图的等效电路分析揭示了具有高极限电容的降低的串联电阻。