Ravi Vikash Kumar, Yu Seong Hoon, Rajput Parikshit Kumar, Nayak Chandrani, Bhattacharyya Dibyendu, Chung Dae Sung, Nag Angshuman
Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune-411008, India.
Nanoscale. 2021 Jan 28;13(3):1616-1623. doi: 10.1039/d0nr08078k.
The theoretical optoelectronic properties of chalcogenide perovskites (e.g., BaZrS3) are as good as those of halide perovskites (e.g., CH3NH3PbI3). But the fabrication of optoelectronic devices is rarely reported, mainly because researchers still do not know how to prepare good quality thin films of chalcogenide perovskites. Here, we report colloidal BaZrS3 nanocrystals (NCs, 40-60 nm) and their solution processed thin film transistors. BaZrS3 NCs are first prepared using a solid-state synthesis route, and the subsequent surface modifications lead to a colloidal dispersion of NCs in both polar N-methyl-2-pyrrolidinone and non-polar chloroform solvents. The NCs exhibit good thermal (15-673 K) and aqueous stability. Colloidal BaZrS3 NCs in chloroform are then used to make field effect transistors showing ambipolar properties with a hole mobility of 0.059 cm2 V-1 s-1 and an electron mobility of 0.017 cm2 V-1 s-1. This report of solution processed chalcogenide perovskite thin films with reasonable carrier mobility and optical absorption and emission is expected to pave the way for future optoelectronic devices of chalcogenide perovskites.
硫族钙钛矿（如BaZrS3）的理论光电特性与卤化物钙钛矿（如CH3NH3PbI3）相当。但关于光电器件制造的报道却很少，主要是因为研究人员仍不知道如何制备高质量的硫族钙钛矿薄膜。在此，我们报道了胶体状的BaZrS3纳米晶体（NCs，40 - 60纳米）及其溶液处理的薄膜晶体管。首先采用固态合成路线制备BaZrS3 NCs，随后的表面改性使NCs在极性N - 甲基 - 2 - 吡咯烷酮和非极性氯仿溶剂中均形成胶体分散体。这些NCs表现出良好的热稳定性（15 - 673 K）和水稳定性。然后，使用氯仿中的胶体状BaZrS3 NCs制作场效应晶体管，其呈现双极性特性，空穴迁移率为0.059 cm2 V-1 s-1，电子迁移率为0.017 cm2 V-1 s-1。这份关于具有合理载流子迁移率以及光吸收和发射特性的溶液处理硫族钙钛矿薄膜的报告，有望为未来硫族钙钛矿光电器件的发展铺平道路。
