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二维金属二碲化钒作为一种高性能电极材料。

Two-Dimensional Metallic Vanadium Ditelluride as a High-Performance Electrode Material.

作者信息

Shi Jianping, Huan Yahuan, Zhao Xiaoxu, Yang Pengfei, Hong Min, Xie Chunyu, Pennycook Stephen, Zhang Yanfeng

机构信息

The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.

Beijing National Laboratory for Molecular Sciences, Beijing 100190, China.

出版信息

ACS Nano. 2021 Jan 26;15(1):1858-1868. doi: 10.1021/acsnano.0c10250. Epub 2021 Jan 14.

Abstract

Two-dimensional (2D) metallic transition-metal dichalcogenides (MTMDCs) are considered as ideal electrode materials for enhancing the device performances of 2D semiconducting transition-metal dichalcogenides, due to their similar atomic structures and complementary electronic properties. Vanadium ditelluride (VTe) behaves as a fascinating material in MTMDCs family, presenting room-temperature ferromagnetism, charge density waves order, and topological property. However, its practical applications in universal electrode/energy-related fields remain unexplored. Herein, we achieved the direct synthesis of ultrathin, large-domain, and thickness-tunable 1T-VTe nanosheets on an easily available mica substrate by chemical vapor deposition (CVD). We further uncover that the CVD-derived 1T-VTe can serve as a high-performance electrode material thanks to its ultrahigh conductivity. Accordingly, a 6 times higher field-effect mobility (∼47.5 cm V s) was achieved in 1T-VTe-contacted monolayer MoS devices than that using a conventional Ti/Au electrode (∼8.1 cm V s). Moreover, the CVD-synthesized 1T-VTe nanosheets are revealed to present excellent electrocatalytic activity for hydrogen evolution reaction. These results should propel the direct application of CVD-grown 2D MTMDCs as high-performance electrode materials in all 2D materials related devices.

摘要

二维(2D)金属过渡金属二硫属化物(MTMDCs)由于其相似的原子结构和互补的电子特性,被认为是增强二维半导体过渡金属二硫属化物器件性能的理想电极材料。碲化钒(VTe)在MTMDCs家族中是一种引人入胜的材料,具有室温铁磁性、电荷密度波有序性和拓扑性质。然而,其在通用电极/能源相关领域的实际应用仍未得到探索。在此,我们通过化学气相沉积(CVD)在易于获得的云母衬底上实现了超薄、大尺寸且厚度可调的1T-VTe纳米片的直接合成。我们进一步发现,CVD衍生的1T-VTe由于其超高的导电性,可以作为一种高性能电极材料。因此,在与1T-VTe接触的单层MoS器件中,场效应迁移率(约47.5 cm² V⁻¹ s⁻¹)比使用传统Ti/Au电极(约8.1 cm² V⁻¹ s⁻¹)的器件高出6倍。此外,CVD合成的1T-VTe纳米片被发现对析氢反应具有优异的电催化活性。这些结果将推动CVD生长的二维MTMDCs作为高性能电极材料在所有二维材料相关器件中的直接应用。

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