二维二碲化钒的化学气相沉积及温度相关拉曼表征
Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride.
作者信息
Hossain Mongur, Iqbal Muhammad Ahsan, Wu Juanxia, Xie Liming
机构信息
Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082 P. R. China
CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology Beijing 100190 P. R. China
出版信息
RSC Adv. 2021 Jan 12;11(5):2624-2629. doi: 10.1039/d0ra07868a. eCollection 2021 Jan 11.
Recently, ultrathin two-dimensional (2D) metallic vanadium dichalcogenides have attracted widespread attention because of the charge density wave (CDW) phase transition and possible ferromagnetism. Herein, we report the synthesis and temperature-dependent Raman characterization of the 2D vanadium ditelluride (VTe). The synthesis is done by atmospheric pressure chemical vapor deposition (APCVD) using vanadium chloride (VCl) precursor on fluorphlogopite mica, sapphire, and h-BN substrates. A large area of the thin film with thickness ∼10 nm is grown on the hexagonal boron nitride (h-BN) substrate. Temperature-dependent Raman characterization of VTe is conducted from room temperature to 513 K. Remarkable changes of Raman modes at around 413 K are observed, indicating the structural phase transition.
最近，超薄二维（2D）金属二硫属钒化物因其电荷密度波（CDW）相变和可能的铁磁性而受到广泛关注。在此，我们报告了二维碲化钒（VTe）的合成及其随温度变化的拉曼表征。合成是通过常压化学气相沉积（APCVD），使用氯化钒（VCl）前驱体在氟金云母、蓝宝石和六方氮化硼（h-BN）衬底上进行的。在六方氮化硼（h-BN）衬底上生长出了大面积厚度约为10 nm的薄膜。对VTe进行了从室温到513 K的随温度变化的拉曼表征。在约413 K处观察到拉曼模式发生显著变化，表明发生了结构相变。
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