Kim Dong Hyup, Suh Ahram, Park Geonhyeong, Yoon Dong Ki, Kim So Youn
School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
ACS Appl Mater Interfaces. 2021 Feb 3;13(4):5772-5781. doi: 10.1021/acsami.0c19665. Epub 2021 Jan 20.
Directed self-assembly (DSA) of block copolymer (BCP) thin films is of particular interest in nanoscience and nanotechnology due to its superior ability to form various well-aligned nanopatterns. Herein, nanoscratch-DSA is introduced as a simple and scalable DSA strategy allowing highly aligned BCP nanopatterns over a large area. A gentle scratching on the target substrate with a commercial diamond lapping film can form uniaxially aligned nanoscratches. As applied in BCP thin films, the nanoscratch effectively guides the self-assembly of overlying BCPs and provides highly aligned nanopatterns along the direction of the nanoscratch. The nanoscratch-DSA is not material-specific, allowing more versatile nanofabrication for various functional nanomaterials. In addition, we demonstrate that the nanoscratch-DSA can be utilized as a direction-controllable and area-selective nanofabrication method.
由于嵌段共聚物（BCP）薄膜的定向自组装（DSA）能够形成各种排列良好的纳米图案，因此在纳米科学和纳米技术领域备受关注。在此，我们引入了纳米划痕-DSA，这是一种简单且可扩展的DSA策略，能够在大面积上实现高度排列的BCP纳米图案。使用商用金刚石研磨膜在目标基板上进行轻微划痕，可以形成单轴排列的纳米划痕。当应用于BCP薄膜时，纳米划痕有效地引导了上层BCP的自组装，并沿纳米划痕方向提供了高度排列的纳米图案。纳米划痕-DSA不依赖于特定材料，可为各种功能纳米材料提供更通用的纳米制造方法。此外，我们证明了纳米划痕-DSA可作为一种方向可控且区域选择性的纳米制造方法。
