Siah Chun Fei, Lum Lucas Yu Xiang, Wang Jianxiong, Goh Simon Chun Kiat, Tan Chong Wei, Hu Liangxing, Coquet Philippe, Li Hong, Tan Chuan Seng, Tay Beng Kang
Centre for Micro- and Nano-Electronics (CMNE), School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore.
CNRS-NTU-THALES Research Alliances/UMI 3288, Research Techno Plaza, 50 Nanyang Ave, Border X Block, Level 6, Singapore 637553, Singapore.
Micromachines (Basel). 2021 Jan 18;12(1):95. doi: 10.3390/mi12010095.
Carbon nanotubes (CNTs) have, over the years, been used in research as a promising material in electronics as a thermal interface material and as interconnects amongst other applications. However, there exist several issues preventing the widespread integration of CNTs onto device applications, e.g., high growth temperature and interfacial resistance. To overcome these issues, a complementary metal oxide semiconductor (CMOS)-compatible CNT array transfer method that electrically connects the CNT arrays to target device substrates was developed. The method separates the CNT growth and preparation steps from the target substrate. Utilizing an alignment tool with the capabilities of thermocompression enables a highly accurate transfer of CNT arrays onto designated areas with desired patterns. With this transfer process as a starting point, improvement pointers are also discussed in this paper to further improve the quality of the transferred CNTs.
多年来,碳纳米管(CNTs)在研究中一直被用作电子学领域一种有前景的材料,可作为热界面材料以及用于互连等其他应用。然而,存在几个问题阻碍了碳纳米管在器件应用中的广泛集成,例如生长温度高和界面电阻。为克服这些问题,开发了一种互补金属氧化物半导体(CMOS)兼容的碳纳米管阵列转移方法,该方法将碳纳米管阵列电连接到目标器件基板上。该方法将碳纳米管的生长和制备步骤与目标基板分开。利用具有热压能力的对准工具能够将碳纳米管阵列高精度地转移到具有所需图案的指定区域。以这个转移过程为起点,本文还讨论了改进要点,以进一步提高转移后的碳纳米管的质量。