氟掺杂氧化锡电极上原子层沉积的AlO薄膜：稳定性和阻隔性能。
Atomic layer deposited films of AlO on fluorine-doped tin oxide electrodes: stability and barrier properties.
作者信息
Krýsová Hana, Neumann-Spallart Michael, Tarábková Hana, Janda Pavel, Kavan Ladislav, Krýsa Josef
机构信息
J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.
Department of Inorganic Technology, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
出版信息
Beilstein J Nanotechnol. 2021 Jan 5;12:24-34. doi: 10.3762/bjnano.12.2. eCollection 2021.
AlO layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO/glass) substrates blocked electron transfer to redox couples (ferricyanide/ferrocyanide) in aqueous media. However, these films were rapidly dissolved in 1 M NaOH (≈100 nm/h). The dissolution was slower in 1 M HSO (1 nm/h) but after 24 h the blocking behaviour was entirely lost. The optimal stability was reached at pH 7.2 where no changes were found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO.
通过原子层沉积将AlO层沉积在电极上。测试了溶解度和电子传输阻断性能。沉积在氟掺杂氧化锡（FTO，F:SnO/玻璃）衬底上的薄膜在水性介质中阻断了电子向氧化还原对（铁氰化物/亚铁氰化物）的转移。然而，这些薄膜在1 M NaOH中迅速溶解（约100 nm/h）。在1 M HSO中溶解较慢（1 nm/h），但24小时后阻断行为完全丧失。在pH 7.2时达到最佳稳定性，在24小时内未发现变化，甚至在暴露168小时后，阻断行为的变化仍然很小。对于防止FTO直接还原也观察到了这种行为。
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