Lu Pai, Xue Haitao, Liu Wentao, Feng Zhongbao, Sun Qiang
School of Metallurgy, Northeastern University, Shenyang 110819, Liaoning, China.
Nanomaterials (Basel). 2021 Jan 20;11(2):257. doi: 10.3390/nano11020257.
High frequency supercapacitors (HFSCs) are promising in alternating current line filtering and adaptable storage of high-frequency pulse electrical energy. Herein, we report a facile yet integrated-circuit-compatible fabrication of HFSC electrodes by combining chemical roughening of the sputtered metal (Au) films and in situ trace loading of a pseudocapacitive material (MnO). The developed electrode fabrication route is versatile for different substrates, and is described with the application paradigms of both on-chip (with Si/SiO substrate) and off-chip (without Si/SiO substrate, with Ti substrate as an example in this study) HFSCs. With Au/MnO films on Si/SiO substrates as the working electrodes, the derived on-chip HFSC displayed satisfactory performance in high frequency applications (i.e., an areal capacitance of 131.7 µF cm, a phase angle of -78°, and a RC time constant of 0.27 ms, at 120 Hz).
高频超级电容器（HFSCs）在交流线路滤波和高频脉冲电能的适应性存储方面具有广阔前景。在此，我们报告了一种通过结合溅射金属（Au）薄膜的化学粗糙化和赝电容材料（MnO）的原位微量负载来制备与集成电路兼容的HFSC电极的简便方法。所开发的电极制造路线适用于不同的基板，并通过片上（以Si/SiO基板为例）和片外（无Si/SiO基板，本研究以Ti基板为例）HFSCs的应用范例进行了描述。以Si/SiO基板上的Au/MnO薄膜作为工作电极，所制备的片上HFSC在高频应用中表现出令人满意的性能（即在120Hz时，面积电容为131.7μF/cm²，相角为-78°，RC时间常数为0.27ms）。
