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用于片上和片外高频超级电容器的化学粗糙化、溅射金膜负载微量氧化锰

Chemically Roughened, Sputtered Au Films with Trace-Loaded Manganese Oxide for both On-Chip and Off-Chip High Frequency Supercapacitors.

作者信息

Lu Pai, Xue Haitao, Liu Wentao, Feng Zhongbao, Sun Qiang

机构信息

School of Metallurgy, Northeastern University, Shenyang 110819, Liaoning, China.

出版信息

Nanomaterials (Basel). 2021 Jan 20;11(2):257. doi: 10.3390/nano11020257.

Abstract

High frequency supercapacitors (HFSCs) are promising in alternating current line filtering and adaptable storage of high-frequency pulse electrical energy. Herein, we report a facile yet integrated-circuit-compatible fabrication of HFSC electrodes by combining chemical roughening of the sputtered metal (Au) films and in situ trace loading of a pseudocapacitive material (MnO). The developed electrode fabrication route is versatile for different substrates, and is described with the application paradigms of both on-chip (with Si/SiO substrate) and off-chip (without Si/SiO substrate, with Ti substrate as an example in this study) HFSCs. With Au/MnO films on Si/SiO substrates as the working electrodes, the derived on-chip HFSC displayed satisfactory performance in high frequency applications (i.e., an areal capacitance of 131.7 µF cm, a phase angle of -78°, and a RC time constant of 0.27 ms, at 120 Hz).

摘要

高频超级电容器(HFSCs)在交流线路滤波和高频脉冲电能的适应性存储方面具有广阔前景。在此,我们报告了一种通过结合溅射金属(Au)薄膜的化学粗糙化和赝电容材料(MnO)的原位微量负载来制备与集成电路兼容的HFSC电极的简便方法。所开发的电极制造路线适用于不同的基板,并通过片上(以Si/SiO基板为例)和片外(无Si/SiO基板,本研究以Ti基板为例)HFSCs的应用范例进行了描述。以Si/SiO基板上的Au/MnO薄膜作为工作电极,所制备的片上HFSC在高频应用中表现出令人满意的性能(即在120Hz时,面积电容为131.7μF/cm²,相角为-78°,RC时间常数为0.27ms)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5a9f/7909291/1bdbb35f654e/nanomaterials-11-00257-g001.jpg

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