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通过可控表面粗糙化实现用于片上集成微型超级电容器的增强电极沉积

Enhanced Electrode Deposition for On-Chip Integrated Micro-Supercapacitors by Controlled Surface Roughening.

作者信息

Vyas Agin, Wang Kejian, Anderson Alec, Velasco Andres, Van den Eeckhoudt Ruben, Haque Mohammad Mazharul, Li Qi, Smith Anderson, Lundgren Per, Enoksson Peter

机构信息

Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Kemivagen 9, 41296 Gothenburg, Sweden.

University of California Santa Barbara, Santa Barbara, 93106 California, United States.

出版信息

ACS Omega. 2020 Mar 6;5(10):5219-5228. doi: 10.1021/acsomega.9b04266. eCollection 2020 Mar 17.

Abstract

On-chip micro-supercapacitors (MSCs), integrated with energy harvesters, hold substantial promise for developing self-powered wireless sensor systems. However, MSCs have conventionally been manufactured through techniques incompatible with semiconductor fabrication technology, the most significant bottleneck being the electrode deposition technique. Utilization of spin-coating for electrode deposition has shown potential to deliver several complementary metal-oxide-semiconductor (CMOS)-compatible MSCs on a silicon substrate. Yet, their limited electrochemical performance and yield over the substrate have remained challenges obstructing their subsequent integration. We report a facile surface roughening technique for improving the wafer yield and the electrochemical performance of CMOS-compatible MSCs, specifically for reduced graphene oxide as an electrode material. A 4 nm iron layer is deposited and annealed on the wafer substrate to increase the roughness of the surface. In comparison to standard nonroughened MSCs, the increase in surface roughness leads to a 78% increased electrode thickness, 21% improvement in mass retention, 57% improvement in the uniformity of the spin-coated electrodes, and a high yield of 87% working devices on a 2″ silicon substrate. Furthermore, these improvements directly translate to higher capacitive performance with enhanced rate capability, energy, and power density. This technique brings us one step closer to fully integrable CMOS-compatible MSCs in self-powered systems for on-chip wireless sensor electronics.

摘要

与能量采集器集成的片上微型超级电容器(MSC),在开发自供电无线传感器系统方面具有巨大潜力。然而,传统上MSC是通过与半导体制造技术不兼容的技术制造的,最主要的瓶颈是电极沉积技术。利用旋涂法进行电极沉积已显示出在硅衬底上制造几种互补金属氧化物半导体(CMOS)兼容的MSC的潜力。然而,它们在衬底上有限的电化学性能和成品率仍然是阻碍其后续集成的挑战。我们报告了一种简便的表面粗糙化技术,用于提高CMOS兼容的MSC的晶圆成品率和电化学性能,特别是对于作为电极材料的还原氧化石墨烯。在晶圆衬底上沉积并退火一层4纳米厚的铁层,以增加表面粗糙度。与标准的非粗糙化MSC相比,表面粗糙度的增加导致电极厚度增加78%,质量保留率提高21%,旋涂电极的均匀性提高57%,并且在2英寸硅衬底上工作器件的成品率高达87%。此外,这些改进直接转化为更高的电容性能,具有增强的倍率性能、能量和功率密度。这项技术使我们在用于片上无线传感电子设备的自供电系统中,向完全可集成的CMOS兼容MSC又迈进了一步。

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