Hieu Nguyen Minh, Hai Nguyen Hoang, Tuan Mai Anh
Nano and Energy Center, University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai, Thanh Xuan, Hanoi 120106, Vietnam.
National Center for Technological Progress, 25 Le Thanh Tong, Hoan Kiem, Hanoi 110125, Vietnam.
J Nanosci Nanotechnol. 2021 Apr 1;21(4):2538-2544. doi: 10.1166/jnn.2021.19092.
Tin oxides nanowires were prepared by chemical vapor deposition using shadow mask. X-ray diffraction indicated that the products were tetragonal having crystalline structure with lattice constants = 0.474 nm and = 0.318 nm. The high-resolution transmission electron microscopy revealed that inter planar spacing is 0.25 nm. The results chemical mapping in scanning transmission electron microscopy so that the two elements of Oxygen and Tin are distributed very homogeneously in nanowires and exhibit no apparent elements separation. A bottom-up mechanism for SnO₂ growth process has been proposed to explain the morphology of SnO₂ nanowires.
采用阴影掩膜通过化学气相沉积法制备了氧化锡纳米线。X射线衍射表明产物为四方晶系，具有晶体结构，晶格常数a = 0.474 nm和c = 0.318 nm。高分辨率透射电子显微镜显示晶面间距为0.25 nm。扫描透射电子显微镜中的结果化学图谱表明，氧和锡这两种元素在纳米线中分布非常均匀，没有明显的元素分离。已提出一种自下而上的SnO₂生长过程机制来解释SnO₂纳米线的形态。
