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通过铝掺杂改善形貌的铟铝锌氧化物纳米纤维场效应晶体管具有高退火稳定性

High Annealing Stability of InAlZnO Nanofiber Field-Effect Transistors with Improved Morphology by Al Doping.

作者信息

He Junyu, Liu Xuhai, Song Longfei, Li Hao, Zu Hongliang, Li Jiayi, Zhang Hongwei, Zhang Jun, Qin Yuanbin, Wang Fengyun

机构信息

College of Physics and State Key Laboratory of Bio Fibers and Eco Textiles, Qingdao University, Qingdao 266071, China.

College of Microtechnology & Nanotechnology, Qingdao University, Qingdao 266071, China.

出版信息

J Phys Chem Lett. 2021 Feb 4;12(4):1339-1345. doi: 10.1021/acs.jpclett.1c00030. Epub 2021 Jan 27.

DOI:10.1021/acs.jpclett.1c00030
PMID:33502855
Abstract

InO nanofibers usually suffer a high off-current and consequent low on/off current ratio, as well as a large negative threshold voltage (). Furthermore, regarding Zn doped binary-cation InO nanofibers, severe thermal diffusion of Zn elements can result in deteriorated electrical performance when annealed at high temperature. Here, we applied an electrospinning technique to obtain ternary-cation IAZO nanofibers with controllable and chemical stoichiometry. The presence of the Al element in IAZO nanofibers can lead to more superior microstructure with improved uniformity, lower surface defect, and superior metal-oxide-metal lattice at high annealing temperature. Consequently, our Al-doped ternary-cation IAZO devices exhibited an improved on/off current ratio of 10 and a high electron mobility of ∼10 cm V s. Moreover, the electron mobility can be increased to 30 cm V s in our low-voltage operated FETs with high- AlO as the dielectric layer, which can be envisioned to exhibit vast implications for high-performance transparent electronics.

摘要

氧化铟纳米纤维通常存在高截止电流以及随之而来的低开/关电流比,还有较大的负阈值电压()。此外,对于锌掺杂的二元阳离子氧化铟纳米纤维,当在高温下退火时,锌元素的严重热扩散会导致电性能恶化。在此,我们应用静电纺丝技术来获得具有可控和化学计量比的三元阳离子铟铝锌氧化物(IAZO)纳米纤维。IAZO纳米纤维中铝元素的存在可导致在高退火温度下具有更优异的微观结构,具有改善的均匀性、更低的表面缺陷以及优异的金属 - 氧化物 - 金属晶格。因此,我们的铝掺杂三元阳离子IAZO器件表现出改善的10的开/关电流比和约10 cm² V⁻¹ s⁻¹的高电子迁移率。此外,在我们以高介电常数的氧化铝作为介电层的低压操作场效应晶体管中,电子迁移率可提高到30 cm² V⁻¹ s⁻¹,这可以预见对高性能透明电子学具有广泛的意义。

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