College of Physics and College of Electronic and Information Engineering, Qingdao University , Qingdao 266071, China.
ACS Appl Mater Interfaces. 2017 Mar 29;9(12):10805-10812. doi: 10.1021/acsami.6b15916. Epub 2017 Mar 15.
Electrospun metal oxide nanofibers have been regarded as promising blocks for large-area, low-cost, and one-dimensional electronic devices. However, the electronic devices based on electrospun nanofibers usually suffer from poor performance and inferior viability. Here, we report an efficient photochemical process using UV light generated by a high-pressure mercury lamp to promote the electrical performance of the nanofiber-based electronic devices. Such UV treatment can lead to strong photochemical activation of electrospun nanofibers, and therefore, a stable adherent nanofiber network and electronic-clean interface were formed. By use of UV treatment, high-performance indium oxide (InO) nanofiber based field-effect transistors (FETs) with highly efficient modulation of electrical characteristics have been successfully fabricated. To reduce the operating voltage and further improve the device performance, the InO nanofiber FETs based on solution-processed high-k AlO dielectrics were integrated and investigated. The as-fabricated InO/AlO FETs exhibit superior electrical performance, including a high mobility of 19.8 cm V s, a large on/off current ratio of 10, and high stability over time and cycling. The improved performance of the UV-treated FETs was further confirmed by the integration of the electrospun InO/AlO FETs into inverters. This work presents an important advance toward the practical applications of electrospun nanofibers for functional electronic devices.
静电纺金属氧化物纳米纤维已被视为具有应用前景的大面积、低成本和一维电子器件的构建模块。然而，基于静电纺纳米纤维的电子器件通常存在性能差和生存能力低的问题。在这里，我们报告了一种使用高压汞灯产生的紫外光的高效光化学过程，以提高基于纳米纤维的电子器件的性能。这种 UV 处理可以导致静电纺纳米纤维的强烈光化学激活，从而形成稳定的附着纳米纤维网络和电子清洁界面。通过使用 UV 处理，成功制备了高性能的氧化铟（InO）纳米纤维场效应晶体管（FET），其具有高效的电特性调制。为了降低工作电压并进一步提高器件性能，我们集成并研究了基于溶液处理的高介电常数 AlO 电介质的 InO 纳米纤维 FET。所制造的 InO/AlO FET 具有优异的电学性能，包括 19.8 cm V s 的高迁移率、10 的大导通/关断电流比以及长时间和循环过程中的高稳定性。通过将静电纺丝的 InO/AlO FET 集成到反相器中，进一步证实了经过 UV 处理的 FET 的性能得到了改善。这项工作为静电纺纳米纤维在功能性电子器件中的实际应用提供了重要进展。
