Wang M, Howells B, Marshall R A, Taylor J M, Edmonds K W, Rushforth A W, Campion R P, Gallagher B L
School of Physics and Astronomy, University of Nottingham, University Park, Nottingham, NG7 2RD, UK.
Sci Rep. 2021 Jan 27;11(1):2300. doi: 10.1038/s41598-021-81893-2.
We present detailed experimental measurements and simulations of the field-dependent magnetization and magnetoresistance in the vicinity of the Curie temperature in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. The observed dependence of the magnetization on external magnetic field and temperature is consistent with three-dimensional Heisenberg equation of state calculations including a narrow distribution of critical temperatures. The magnetoresistance shows a peak at the Curie temperature due to the suppression of magnetic scattering in an applied magnetic field, which is well-described by considering changes in the square of the magnetization induced by the magnetic field.
我们展示了在高度无序的稀磁半导体（Ga，Mn）As中，居里温度附近与场相关的磁化强度和磁阻的详细实验测量结果和模拟。观察到的磁化强度对外部磁场和温度的依赖性与三维海森堡状态方程计算结果一致，该计算包括临界温度的窄分布。由于在施加磁场中磁散射的抑制，磁阻在居里温度处出现峰值，通过考虑磁场引起的磁化强度平方的变化可以很好地描述这一现象。
