通过化学气相沉积法生长用于高性能光电探测器的大尺寸单晶 WS 单层膜
Growth of a Large, Single-Crystalline WS Monolayer for High-Performance Photodetectors by Chemical Vapor Deposition.
作者信息
Chen Ying
机构信息
Hubei Engineering Technology Research Center of Energy Photoelectric Device and System, Hubei University of Technology, Wuhan 430068, China.
Hubei Collaborative Innovation Center for High-Efficient Utilization of Solar Energy, Wuhan 430068, China.
出版信息
Micromachines (Basel). 2021 Jan 27;12(2):137. doi: 10.3390/mi12020137.
2D WS is a promising candidate for the next generation nanoelectronics, spintronics, valleytronics, and optoelectronics. However, the uncontrollably large-area growth of WS nanosheets and their unsatisfactory performance of the photodetectors based on WS hindered its applications. Here, we proposed a CVD method using tungstic acid as the precursors to grow WS flakes. After being characterized by AFM, Raman, PL, and TEM, we found the as-grown WS flakes were high-quality structures. Then the photodetectors based on the as-grown WS were fabricated, which exhibited high responsivity (7.3 A W), a fast response rate (a response time of 5 ms and a recovery time of 7 ms), prefect external quantum efficiency (EQE) (1814%), and remarkable detectivity () (3.4 × 10 Jones). Our works provided a new CVD method to grow some high-quality WS nanosheets.
二维WS是下一代纳米电子学、自旋电子学、谷电子学和光电子学的一个有前途的候选材料。然而，WS纳米片的大面积不可控生长以及基于WS的光电探测器的不理想性能阻碍了其应用。在此，我们提出了一种以钨酸为前驱体的化学气相沉积（CVD）方法来生长WS薄片。通过原子力显微镜（AFM）、拉曼光谱、光致发光（PL）和透射电子显微镜（TEM）表征后，我们发现生长出的WS薄片是高质量结构。然后制备了基于生长出的WS的光电探测器，其表现出高响应度（7.3 A/W）、快速响应速率（响应时间为5 ms，恢复时间为7 ms）、完美的外量子效率（EQE）（1814%）以及显著的探测率（3.4×10 Jones）。我们的工作提供了一种新的CVD方法来生长一些高质量的WS纳米片。
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