Kim Jongyoon, Lee Kang-Il, Jeong Hyun-Young, Lee Ji-Hoon, Choi Yong Sup
Future Semiconductor Convergence Technology Research Center, Division of Electronics Engineering, Chonbuk National University, Jeonju 54896, Korea.
Institute of Plasma Technology, Korea Institute of Fusion Energy (KFE), Gunsan 54004, Korea.
Rev Sci Instrum. 2021 Jan 1;92(1):013507. doi: 10.1063/5.0031869.
Optical emission spectroscopy is widely used in semiconductor and display manufacturing for plasma process monitoring. However, because of the contamination of the viewport, quantitative analysis is extremely difficult; therefore, qualitative analysis is used to detect species in the process. To extend plasma monitoring in advanced precise processes, the contamination problem of the viewport must be solved. We propose a new spectrum monitoring apparatus with a roll-to-roll transparent film window for optical diagnostics of a plasma system. By moving a transparent film in front of the viewport, contamination in the emission light path becomes negligible. However, the speed of the film should be optimized to reduce the maintenance period and to minimize measurement errors. We calculated the maximum thickness of SiO, SiN, ITO, and the Ar/CHF plasma contaminant to suppress the electron temperature error measured by the line-intensity-ratio within 2% at 2 eV. The thickness of the SiN, ITO, and Ar/CHF plasma contaminant should be thinner than 12.5 nm, 7.5 nm, and 100 nm, respectively.
光发射光谱法在半导体和显示器制造中被广泛用于等离子体过程监测。然而,由于视窗的污染,定量分析极其困难;因此,采用定性分析来检测过程中的物质。为了在先进的精密工艺中扩展等离子体监测,必须解决视窗的污染问题。我们提出了一种用于等离子体系统光学诊断的新型光谱监测装置,该装置带有卷对卷透明薄膜窗口。通过在视窗前移动透明薄膜,发射光路中的污染可忽略不计。然而,薄膜的速度应进行优化,以减少维护周期并将测量误差降至最低。我们计算了SiO、SiN、ITO以及Ar/CHF等离子体污染物的最大厚度,以将通过线强度比测量的电子温度误差在2电子伏特时抑制在2%以内。SiN、ITO和Ar/CHF等离子体污染物的厚度应分别小于12.5纳米、7.5纳米和100纳米。