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单层二硫化钼的超快瞬态亚带隙吸收

Ultrafast transient sub-bandgap absorption of monolayer MoS.

作者信息

Das Susobhan, Wang Yadong, Dai Yunyun, Li Shisheng, Sun Zhipei

机构信息

Department of Electronics and Nanoengineering, Aalto University, 02150, Espoo, Finland.

International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Japan.

出版信息

Light Sci Appl. 2021 Jan 29;10(1):27. doi: 10.1038/s41377-021-00462-4.

Abstract

The light-matter interaction in materials is of remarkable interest for various photonic and optoelectronic applications, which is intrinsically determined by the bandgap of the materials involved. To extend the applications beyond the bandgap limit, it is of great significance to study the light-matter interaction below the material bandgap. Here, we report the ultrafast transient absorption of monolayer molybdenum disulfide in its sub-bandgap region from ~0.86 µm to 1.4 µm. Even though this spectral range is below the bandgap, we observe a significant absorbance enhancement up to ~4.2% in the monolayer molybdenum disulfide (comparable to its absorption within the bandgap region) due to pump-induced absorption by the excited carrier states. The different rise times of the transient absorption at different wavelengths indicate the various contributions of the different carrier states (i.e., real carrier states in the short-wavelength region of ~<1 µm, and exciton states in the long wavelength region of ~>1 µm). Our results elucidate the fundamental understanding regarding the optical properties, excited carrier states, and carrier dynamics in the technologically important near-infrared region, which potentially leads to various photonic and optoelectronic applications (e.g., excited-state-based photodetectors and modulators) of two-dimensional materials and their heterostructures beyond their intrinsic bandgap limitations.

摘要

材料中的光与物质相互作用对于各种光子和光电子应用具有显著的吸引力,这本质上由所涉及材料的带隙决定。为了将应用扩展到带隙限制之外,研究材料带隙以下的光与物质相互作用具有重要意义。在此,我们报道了单层二硫化钼在其亚带隙区域(从约0.86微米到1.4微米)的超快瞬态吸收。尽管这个光谱范围低于带隙,但我们观察到单层二硫化钼中的吸光度显著增强,高达约4.2%(与它在带隙区域内的吸收相当),这是由于激发载流子态的泵浦诱导吸收。不同波长处瞬态吸收的不同上升时间表明了不同载流子态的各种贡献(即,在约<1微米的短波长区域中的真实载流子态,以及在约>1微米的长波长区域中的激子态)。我们的结果阐明了在技术上重要的近红外区域中关于光学性质、激发载流子态和载流子动力学的基本理解,这可能会导致二维材料及其异质结构超越其固有带隙限制的各种光子和光电子应用(例如,基于激发态的光电探测器和调制器)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/61b9/7846580/814d83eb7349/41377_2021_462_Fig1_HTML.jpg

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