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单层MoSat中载流子密度远高于莫特密度时的超快载流子动力学。

Ultrafast carrier dynamics in a monolayer MoSat carrier densities well above Mott density.

作者信息

Khatua Durga Prasad, Singh Asha, Gurung Sabina, Khan Salahuddin, Tanwar Manushree, Kumar Rajesh, Jayabalan J

机构信息

Nano Science Laboratory, Materials Science Section, Raja Ramanna Centre for Advanced Technology, Indore, 452013 India.

Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, India.

出版信息

J Phys Condens Matter. 2022 Feb 8;34(15). doi: 10.1088/1361-648X/ac4dbf.

DOI:10.1088/1361-648X/ac4dbf
PMID:35062012
Abstract

Due to the growing interest in monolayer (ML) molybdenum disulfide (MoS) in several optoelectronic applications like lasers, detectors, sensors, it is important to understand the ultrafast behavior of the excited carriers in this material. In this article, a comprehensive study of the charge carrier dynamics of a monolayer MoSflake has been studied using transient transmission technique near A-exciton under high excitation densities well above the Mott density. Fluence dependent studies has been carried out to understand the origin of the processes which modifies its optical response under excitation. The dissociation of excitons leads to an observed fast bandgap renormalization. At later times when large number of carriers relax the remaining carriers forms excitons leading to a bleaching effect.

摘要

由于在诸如激光器、探测器、传感器等多种光电子应用中,单层(ML)二硫化钼(MoS₂)的关注度日益增加,了解这种材料中受激载流子的超快行为非常重要。在本文中,利用瞬态透射技术,在远高于莫特密度的高激发密度下,对单层MoS₂薄片的电荷载流子动力学进行了全面研究。进行了与能量密度相关的研究,以了解在激发下改变其光学响应的过程的起源。激子的解离导致观察到快速的带隙重整化。在稍后的时间,当大量载流子弛豫时,剩余的载流子形成激子,导致漂白效应。

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