Ko Jongkuk, Berger Rüdiger, Lee Hyemin, Yoon Hyunsik, Cho Jinhan, Char Kookheon
Department of Chemical and Biological Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Physics at Interfaces, Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany.
Chem Soc Rev. 2021 Mar 15;50(5):3585-3628. doi: 10.1039/d0cs01501f.
When various optically and/or electronically active materials, such as conjugated polymers, perovskites, metals, and metal oxides, are confined at the nanoscale, they can exhibit unique nano-confined behavior that significantly differs from the behavior observed at the macroscale. Although controlled nano-confinement of functional materials can allow modulation of their electronic properties without the aid of any synthetic methodologies or additional chemical treatments, limited assembly approaches for nano-confinement and insufficient analytical tools for electronic characterization remain critical challenges in the development of novel optoelectronic materials and the investigation of their modulated properties. This review describes how the nano-confined features of organic and inorganic materials are related to the control and improvement of their optoelectronic properties. In particular, we focus on various assembly approaches for effective nano-confinement as well as methods for nano-electronic characterization. Then, we briefly present challenges and perspectives on the direction of nano-confinement in terms of the preparation of optoelectronic materials with desired functionalities. Furthermore, we believe that this review can provide a basis for developing and designing next-generation optoelectronics through nano-confinement.
当各种光学和/或电子活性材料,如共轭聚合物、钙钛矿、金属和金属氧化物,被限制在纳米尺度时,它们会表现出独特的纳米受限行为,这种行为与在宏观尺度上观察到的行为有显著不同。尽管对功能材料进行可控的纳米限域可以在不借助任何合成方法或额外化学处理的情况下调节其电子性质,但纳米限域的组装方法有限以及电子表征的分析工具不足,仍然是新型光电子材料开发及其调制性质研究中的关键挑战。本综述描述了有机和无机材料的纳米受限特征如何与它们的光电子性质的控制和改善相关。特别是,我们关注各种有效的纳米限域组装方法以及纳米电子表征方法。然后,我们简要介绍了在制备具有所需功能的光电子材料方面纳米限域方向的挑战和前景。此外,我们相信本综述可为通过纳米限域开发和设计下一代光电子学提供基础。