Wu Yangbo, Qu Zhibo, Osman Ahmed, Wei Chen, Cao Wei, Tarazona Antulio, Oo Swe Zin, Chong Harold M H, Muskens Otto L, Mashanovich Goran Z, Nedeljkovic Milos
Opt Lett. 2021 Feb 1;46(3):677-680. doi: 10.1364/OL.412529.
Bolometers are thermal detectors widely applied in the mid-infrared (MIR) wavelength range. In an integrated sensing system on chip, a broadband scalable bolometer absorbing the light over the whole MIR wavelength range could play an important role. In this work, we have developed a waveguide-based bolometer operating in the wavelength range of 3.72-3.88 µm on the amorphous silicon (a-Si) platform. Significant improvements in the bolometer design result in a 20× improved responsivity compared to earlier work on silicon-on-insulator (SOI). The bolometer offers 24.62% change in resistance per milliwatt of input power at 3.8 µm wavelength. The thermal conductance of the bolometer is 3.86×10/, and an improvement as large as 3 orders magnitude may be possible in the future through redesign of the device geometry.
测辐射热计是广泛应用于中红外（MIR）波长范围的热探测器。在片上集成传感系统中，一种能在整个MIR波长范围内吸收光的宽带可扩展测辐射热计可能会发挥重要作用。在这项工作中，我们在非晶硅（a-Si）平台上开发了一种工作在3.72 - 3.88 µm波长范围内的基于波导的测辐射热计。与早期在绝缘体上硅（SOI）的工作相比，测辐射热计设计的显著改进使其响应率提高了20倍。该测辐射热计在3.8 µm波长下，每毫瓦输入功率的电阻变化为24.62%。测辐射热计的热导率为3.86×10/ ，未来通过重新设计器件几何结构，有可能实现高达3个数量级的改进。
