Yan Yujie, Chen Qizhen, Wang Xiumei, Liu Yaqian, Yu Rengjian, Gao Changsong, Chen Huipeng, Guo Tailiang
Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China.
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China.
ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7498-7509. doi: 10.1021/acsami.0c20704. Epub 2021 Feb 3.
Organic phototransistors (OPTs) have attracted enormous attention because of their promising applications in sensing, communication, and imaging. Currently, most OPTs reported utilize field-effect transistors (FETs) with relative long channel length which usually has undesired amplification because of their inherent low transconductance originated from their low channel capacitance, limiting the further improvement of performance. Herein, a vertical channel hybrid electrochemical phototransistor with a nanoscale channel and large transconductance (VECPT) is invented for the first time to achieve ultrahigh photoresponsivity along with a fast response speed. Benefiting from the nanoscale channel length and large transconductance, the photo-generated carriers in channel can be efficiently dissociated, transported, and amplified into the enlarged photocurrent output. Therefore, the devices deliver substantially improved optoelectronic performances with a photoresponsivity as high as ≈2.99 × 10 A/W, detectivity of ≈1.49 × 10 Jones, and fast-speed response of ≈73 μs under a low voltage of 1 V, which are superior to those of the reported OPTs based on FETs. Moreover, the in situ Kelvin probe microscopy is performed to characterize the surface potential of device systems for better elucidating the photosensing mechanism. Furthermore, taking advantage of its excellent optoelectronic performance, an ultraviolet light monitoring system is constructed by integrating VECPT with a light-emitting diode, which also shows the real-time, high-sensitive, and controllable photoresponse threshold properties. All these results demonstrate the great potential of these electrochemical phototransistors and provide valuable insights into the design of the nanoscale channel length device system for high-performance photodetection.
有机光电晶体管(OPTs)因其在传感、通信和成像等领域的广阔应用前景而备受关注。目前,大多数已报道的OPTs采用沟道长度相对较长的场效应晶体管(FETs),由于其固有的低跨导(源于低沟道电容),通常存在不理想的放大效果,限制了性能的进一步提升。在此,首次发明了一种具有纳米级沟道和大跨导的垂直沟道混合电化学光电晶体管(VECPT),以实现超高的光响应度和快速的响应速度。受益于纳米级沟道长度和大跨导,沟道中的光生载流子能够有效地解离、传输并放大为增大的光电流输出。因此,该器件在1 V的低电压下展现出显著提升的光电性能,光响应度高达≈2.99×10 A/W,探测率约为≈1.49×10 Jones,响应速度约为73 μs,优于基于FETs的已报道OPTs。此外,进行了原位开尔文探针显微镜表征器件系统的表面电势,以更好地阐明其光敏机制。此外,利用其优异的光电性能,通过将VECPT与发光二极管集成构建了紫外光监测系统,该系统还展现出实时、高灵敏且可控的光响应阈值特性。所有这些结果证明了这些电化学光电晶体管的巨大潜力,并为高性能光探测的纳米级沟道长度器件系统设计提供了有价值的见解。