Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang 37673, Republic of Korea.
Analytical Science Laboratory, Samsung Advanced Institute of Technology (SAIT) , Suwon 16678, Republic of Korea.
ACS Appl Mater Interfaces. 2017 Apr 5;9(13):11759-11769. doi: 10.1021/acsami.7b02365. Epub 2017 Mar 22.
Optical memories based on photoresponsive organic field-effect transistors (OFETs) are of great interest due to their unique applications, such as multibit storage memories and flexible imaging circuits. Most studies of OFET-type memories have focused on the photoresponsive active channels, but more useful functions can be additionally given to the devices by using floating gates that can absorb light. In this case, effects of photoirradiation on photoactive floating-gate layers need to be fully understood. Herein, we studied the photoinduced erasing effects of floating-gate interlayers on the electrical responses of OFET-type memories and considered the possible mechanisms. Polymer/C composites were inserted between pentacene and SiO to form photoresponsive floating-gate interlayers in transistor memory. When exposed to light, C generated excitons, and these photoexcited carriers contributed to the elimination of trapped charge carriers, which resulted in the recovery of OFET performance. Such memory devices exhibited bistable current states controlled with voltage-driven programming and light-driven erasure. Furthermore, these devices maintained their charge-storing properties over 10 000 s. This proof-of-concept study is expected to open up new avenues in information technology for the development of organic memories that exhibit photoinduced recovery over a wide range of wavelengths of light when combined with appropriate photoactive floating-gate materials.
基于光响应有机场效应晶体管（OFET）的光学存储器因其独特的应用而备受关注，例如多比特存储存储器和柔性成像电路。大多数 OFET 型存储器的研究都集中在光响应有源通道上，但通过使用可以吸收光的浮置栅极，可以为器件赋予更多有用的功能。在这种情况下，需要充分了解光照射对光活性浮置栅极层的影响。在此，我们研究了浮置栅极层对 OFET 型存储器电响应的光致擦除效应，并考虑了可能的机制。在晶体管存储器中，将聚酰亚胺/C 复合材料插入五苯和 SiO 之间，形成光响应浮置栅极层。当暴露于光下时，C 会产生激子，这些光激发载流子有助于消除俘获的电荷载流子，从而恢复 OFET 的性能。这些记忆装置表现出双稳电流状态，可通过电压驱动编程和光驱动擦除来控制。此外，这些器件在超过 10000 s 的时间内保持其存储电荷的特性。这项概念验证研究有望为信息技术开辟新途径，开发出在与适当的光活性浮置栅极材料结合时，在广泛的光波长范围内表现出光致恢复的有机存储器。
