基于具有倒U形谐振器的法诺共振的高灵敏度等离子体传感器。
High Sensitivity Plasmonic Sensor Based on Fano Resonance with Inverted U-Shaped Resonator.
作者信息
Xiao Gongli, Xu Yanping, Yang Hongyan, Ou Zetao, Chen Jianyun, Li Haiou, Liu Xingpeng, Zeng Lizhen, Li Jianqing
机构信息
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China.
Guangxi Key Laboratory of Automatic Detecting Technology and Instruments, Guilin University of Electronic Technology, Guilin 541004, China.
出版信息
Sensors (Basel). 2021 Feb 7;21(4):1164. doi: 10.3390/s21041164.
Herein, we propose a tunable plasmonic sensor with Fano resonators in an inverted U-shaped resonator. By manipulating the sharp asymmetric Fano resonance peaks, a high-sensitivity refractive index sensor can be realized. Using the multimode interference coupled-mode theory and the finite element method, we numerically simulate the influences of geometrical parameters on the plasmonic sensor. Optimizing the structure parameters, we can achieve a high plasmonic sensor with the maximum sensitivity for 840 nm/RIUand figure of merit for 3.9 × 10. The research results provide a reliable theoretical basis for designing high sensitivity to the next generation plasmonic nanosensor.
在此，我们提出一种在倒U形谐振器中带有法诺谐振器的可调谐等离子体传感器。通过操控尖锐的非对称法诺共振峰，可实现高灵敏度折射率传感器。利用多模干涉耦合模理论和有限元方法，我们对几何参数对等离激元传感器的影响进行了数值模拟。通过优化结构参数，我们能够实现一种高灵敏度等离子体传感器，其最大灵敏度为840纳米/折射率单位，品质因数为3.9×10。该研究结果为设计下一代高灵敏度等离子体纳米传感器提供了可靠的理论依据。
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