Chong Chen, Liu Hongxia, Wang Shulong, Chen Shupeng
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Nanoscale Res Lett. 2021 Feb 12;16(1):34. doi: 10.1186/s11671-021-03486-2.
In this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules. DM-DSTGTFET adopts double source and trench gate to enhance the on-state current and to generate bidirectional current. In the proposed structure, two cavities are etched over 1 nm gate oxide for biomolecules filling. A 2D simulation in the Technology Computer-Aided Design (TCAD) is adopted for the analysis of sensitivity study. The results show that under low supply voltage, the current sensitivity of the DM-DSTGTFET is as high as 1.38 × 10, and the threshold voltage sensitivity can reach 1.2 V. Therefore, the DM-DSTGTFET biosensor has good application prospects due to its low power consumption and high sensitivity.
本文提出了一种基于生物传感器的介质调制双源沟槽栅隧道场效应晶体管（DM-DSTGTFET）用于生物分子检测。DM-DSTGTFET采用双源和沟槽栅来增强导通电流并产生双向电流。在所提出的结构中，在1纳米厚的栅氧化层上蚀刻出两个用于填充生物分子的腔。采用技术计算机辅助设计（TCAD）中的二维模拟来分析灵敏度研究。结果表明，在低电源电压下，DM-DSTGTFET的电流灵敏度高达1.38×10，阈值电压灵敏度可达到1.2伏。因此，DM-DSTGTFET生物传感器因其低功耗和高灵敏度而具有良好的应用前景。
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