Chong Chen, Liu Hongxia, Du Shougang, Wang Shulong, Zhang Hao
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.
Nanomaterials (Basel). 2023 Jan 28;13(3):531. doi: 10.3390/nano13030531.
In order to detect biomolecules, a biosensor based on a dielectric-modulated stacked source trench gate tunnel field effect transistor (DM-SSTGTFET) is proposed. The stacked source structure can simultaneously make the on-state current higher and the off-state current lower. The trench gate structure will increase the tunneling area and tunneling probability. Technology computer-aided design (TCAD) is used for the sensitivity study of the proposed structured biosensor. The results show that the current sensitivity of the DM-SSTGTFET biosensor can be as high as 10, the threshold voltage sensitivity can reach 0.46 V and the subthreshold swing sensitivity can reach 0.8. As a result of its high sensitivity and low power consumption, the proposed biosensor has highly promising prospects.
为了检测生物分子，提出了一种基于介电调制堆叠源极沟槽栅隧道场效应晶体管（DM-SSTGTFET）的生物传感器。堆叠源极结构可以同时使导通状态电流更高，截止状态电流更低。沟槽栅结构将增加隧穿面积和隧穿概率。采用技术计算机辅助设计（TCAD）对所提出的结构化生物传感器进行灵敏度研究。结果表明，DM-SSTGTFET生物传感器的电流灵敏度可高达10，阈值电压灵敏度可达0.46 V，亚阈值摆幅灵敏度可达0.8。由于其高灵敏度和低功耗，所提出的生物传感器具有非常广阔的应用前景。
