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异质界面对嵌入型MoS中锂诱导相变的影响

Heterointerface Effects on Lithium-Induced Phase Transitions in Intercalated MoS.

作者信息

Yazdani Sajad, Pondick Joshua V, Kumar Aakash, Yarali Milad, Woods John M, Hynek David J, Qiu Diana Y, Cha Judy J

机构信息

Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States.

Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States.

出版信息

ACS Appl Mater Interfaces. 2021 Mar 3;13(8):10603-10611. doi: 10.1021/acsami.0c21495. Epub 2021 Feb 17.

DOI:10.1021/acsami.0c21495
PMID:33596044
Abstract

The intercalation-induced phase transition of MoS from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, calculations show that intercalating Li at a MoS-hexagonal boron nitride (BN) interface stabilizes the 1T phase over the 2H phase of MoS by ∼100 mJ m , suggesting that encapsulating MoS with BN may lower the electrochemical energy needed for the intercalation-induced phase transition. However, Raman spectroscopy of BN-MoS-BN heterostructures during the electrochemical intercalation of Li shows that the phase transition occurs at the same applied voltage for the heterostructure as for bare MoS. We hypothesize that the predicted thermodynamic stabilization of the 1T'-MoS-BN interface is counteracted by an energy barrier to the phase transition imposed by the steric hindrance of the heterointerface. The phase transition occurs at lower applied voltages upon heating the heterostructure, which supports our hypothesis. Our study highlights that interfacial effects of 2D heterostructures can go beyond modulating electrical properties and can modify electrochemical and phase transition behaviors.

摘要

近十年来,人们对MoS从半导体2H相到半金属1T'相的嵌入诱导相变进行了详细研究;然而,MoS与其他二维(2D)晶体之间的异质界面在相变中的作用在很大程度上被忽视了。在此,计算表明,在MoS-六方氮化硼(BN)界面嵌入锂会使MoS的1T相比2H相稳定约100 mJ m ,这表明用BN包裹MoS可能会降低嵌入诱导相变所需的电化学能量。然而,锂电化学嵌入过程中BN-MoS-BN异质结构的拉曼光谱表明,异质结构与裸MoS在相同的外加电压下发生相变。我们推测,预测的1T'-MoS-BN界面的热力学稳定性被异质界面的空间位阻对相变施加的能垒抵消。加热异质结构时,相变在较低的外加电压下发生,这支持了我们的假设。我们的研究强调,二维异质结构的界面效应不仅可以调节电学性质,还可以改变电化学和相变行为。

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