Frasca Simone, Leghziel Rebecca C, Arabadzhiev Ivo N, Pasquier Benoît, Tomassi Grégoire F M, Carrara Sandro, Charbon Edoardo
Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), 2002, Neuchâtel, Switzerland.
Integrated Circuits Laboratory (ICLAB), École Polytechnique Fédérale de Lausanne (EPFL), 2002, Neuchâtel, Switzerland.
Sci Rep. 2021 Feb 17;11(1):3997. doi: 10.1038/s41598-021-83546-w.
We present here, for the first time, a fabrication technique that allows manufacturing scallop free,non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturing as they enable 3D chip integration. However, the usual standardized TSV fabrication process has to deal with scalloping, an imperfection in the sidewalls caused by the deep reactive ion etching. The presence of scalloping causes stress and field concentration in the dielectric barrier, thereby dramatically impacting the following TSV filling step, which is performed by means of electrochemical plating. So, we propose here a new scallop free and non-tapered approach to overcome this challenge by adding a new step to the standard TSV procedure exploiting the crystalline orientation of silicon wafers. Thank to this new step, that we called "Michelangelo", we obtained an extremely well polishing of the TSV holes, by reaching atomic-level smoothness and a record aspect ratio of 28:1. The Michelangelo step will thus drastically reduce the footprint of 3D structures and will allow unprecedented efficiency in 3D chip integration.
我们首次在此展示一种制造技术,该技术能够在硅片上制造无扇贝形、无锥度、高深宽比的硅通孔(TSV)。TSV是现代大规模制造中的主要技术之一,因为它们能够实现3D芯片集成。然而,通常的标准化TSV制造工艺必须应对扇贝形问题,这是由深反应离子刻蚀导致的侧壁缺陷。扇贝形的存在会在介质阻挡层中引起应力和场集中,从而极大地影响随后通过电化学镀进行的TSV填充步骤。因此,我们在此提出一种新的无扇贝形且无锥度的方法,通过在标准TSV工艺中增加一个利用硅片晶体取向的新步骤来克服这一挑战。多亏了我们称为“米开朗基罗”的这一新步骤,我们实现了TSV孔的极佳抛光,达到了原子级的光滑度以及28:1的创纪录深宽比。“米开朗基罗”步骤将因此大幅减少3D结构的占地面积,并将在3D芯片集成中实现前所未有的效率。