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玻璃基板上的闪存诱导坚固铜电极及其在薄膜μLED中的应用。

A Flash-Induced Robust Cu Electrode on Glass Substrates and Its Application for Thin-Film μLEDs.

作者信息

Shin Jung Ho, Park Jung Hwan, Seo Jeongmin, Im Tae Hong, Kim Jong Chan, Lee Han Eol, Kim Do Hyun, Woo Kie Young, Jeong Hu Young, Cho Yong-Hoon, Kim Taek-Soo, Kang Il-Suk, Lee Keon Jae

机构信息

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.

Department of Mechanical Engineering (Department of Aeronautics, Mechanical and Electronic Convergence Engineering), Kumoh National Institute of Technology, 61 Daehak-ro, Gumi, Gyeongbuk, 39177, Republic of Korea.

出版信息

Adv Mater. 2021 Apr;33(13):e2007186. doi: 10.1002/adma.202007186. Epub 2021 Feb 26.

DOI:10.1002/adma.202007186
PMID:33634556
Abstract

A robust Cu conductor on a glass substrate for thin-film μLEDs using the flash-induced chemical/physical interlocking between Cu and glass is reported. During millisecond light irradiation, CuO nanoparticles (NPs) on the display substrate are transformed into a conductive Cu film by reduction and sintering. At the same time, intensive heating at the boundary of CuO NPs and glass chemically induces the formation of an ultrathin Cu O interlayer within the Cu/glass interface for strong adhesion. Cu nanointerlocking occurs by transient glass softening and interface fluctuation to increase the contact area. Owing to these flash-induced interfacial interactions, the flash-activated Cu electrode exhibits an adhesion energy of 10 J m , which is five times higher than that of vacuum-deposited Cu. An AlGaInP thin-film vertical μLED (VLED) forms an electrical interconnection with the flash-induced Cu electrode via an ACF bonding process, resulting in a high optical power density of 41 mW mm . The Cu conductor enables reliable VLED operation regardless of harsh thermal stress and moisture infiltration under a high-temperature storage test, temperature humidity test, and thermal shock test. 50 × 50 VLED arrays transferred onto the flash-induced robust Cu electrode show high illumination yield and uniform distribution of forward voltage, peak wavelength, and device temperature.

摘要

报道了一种用于薄膜微发光二极管的玻璃基板上的坚固铜导体,其利用铜与玻璃之间的闪光诱导化学/物理互锁。在毫秒级光照期间,显示基板上的氧化铜纳米颗粒(NPs)通过还原和烧结转化为导电铜膜。同时,氧化铜纳米颗粒与玻璃边界处的强烈加热在铜/玻璃界面内化学诱导形成超薄氧化铜中间层,以实现强附着力。铜纳米互锁通过瞬态玻璃软化和界面波动发生,以增加接触面积。由于这些闪光诱导的界面相互作用,闪光激活的铜电极表现出10 J/m²的粘附能,这比真空沉积铜的粘附能高五倍。通过ACF键合工艺,AlGaInP薄膜垂直微发光二极管(VLED)与闪光诱导的铜电极形成电互连,从而产生41 mW/mm²的高光功率密度。在高温存储测试、温度湿度测试和热冲击测试下,无论热应力和湿气渗透多么恶劣,铜导体都能使VLED可靠运行。转移到闪光诱导的坚固铜电极上的50×50 VLED阵列显示出高照明产量以及正向电压、峰值波长和器件温度的均匀分布。

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