Liu Yali, Wu Xiaoxiang, Guo Wenxuan, Li Mengge, Niu Xinyue, Yao Jiadong, Yu Ying, Xing Boran, Yan Xiaoyuan, Zhang Shucheng, Sha Jian, Wang Yewu
Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China.
Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
Nanotechnology. 2021 Mar 12;32(22). doi: 10.1088/1361-6528/abea39.
Heterojunction integrated by two-dimensional/three-dimensional materials has shown great potential applications in optoelectronic devices because of its fast response speed, high specific detectivity and broad spectral response. In this work, the vertical n-Si/p-GaTe heterojunction has been designed and fabricated, which shows a high responsivity up to 5.73 A Wand a fast response time of 20s at zero bias benifitting from the high efficiency of light absorption, internal photocurrent gain and strong built-in electrical field. A specific detectivity of 10Jones and a broad spectral response ranging from 300 to 1100 nm can also be achieved. This work provides an alternative strategy for high-performance self-powered optoelectronic devices.
由二维/三维材料集成的异质结因其快速响应速度、高比探测率和宽光谱响应而在光电器件中显示出巨大的潜在应用。在这项工作中，设计并制备了垂直n-Si/p-GaTe异质结，由于其光吸收效率高、内光电流增益大以及强内建电场，在零偏压下具有高达5.73 A/W的高响应度和20 s的快速响应时间。还可实现10 Jones的比探测率以及300至1100 nm的宽光谱响应。这项工作为高性能自供电光电器件提供了一种替代策略。
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