Zhang Yihang, Zhao Xiaojun, Han Xiaona, Li Yawen, Zhang Zhenzhen, Li Tengfei, Xing Jie, Zuo Xia, Lin Yuze
Department of Chemistry, Capital Normal University, Beijing 100048, China.
Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
Langmuir. 2021 Mar 16;37(10):3173-3179. doi: 10.1021/acs.langmuir.1c00080. Epub 2021 Mar 3.
The electron transport layers (ETLs) are one of the crucial factors for realizing the high performance of inverted organic solar cells (OSCs). In inverted OSCs, zinc oxide (ZnO) is a widely used n-type semiconductor as the ETL material. However, when exposed to ultraviolet (UV) light, ZnO induces decomposition of organic materials. Tin dioxide (SnO) has higher conductivity, higher electron mobility, wider bandgap, and weaker absorption of UV light, which is thought to be one of the promising ETLs. Unfortunately, a SnO ETL is suffering from high work function (WF), which greatly decreases the ability of charge transport and collection. Here, we induce a facile strategy to reduce the WF of SnO by Co tuning. The Co-tuned SnO exhibits a low WF of 3.64 eV, holding high transmittance and high conductivity. The OSCs based on PM6:Y6 with a Co-SnO ETL show a notable power conversion efficiency of 15.3%, which is superior to those of the OSCs with ZnO and SnO ETLs. The OSCs with a Co-SnO ETL under continuous UV light and light-emitting diode irradiation exhibit a more robust photostability relative to OSCs with pristine SnO ETLs. The trap densities of Co-SnO films are lower than that of the SnO film, which may contribute to enhanced stability of OSCs.
电子传输层(ETL)是实现高性能倒置有机太阳能电池(OSC)的关键因素之一。在倒置OSC中,氧化锌(ZnO)作为ETL材料是一种广泛使用的n型半导体。然而,当暴露于紫外线(UV)时,ZnO会导致有机材料分解。二氧化锡(SnO)具有更高的电导率、更高的电子迁移率、更宽的带隙以及较弱的紫外线吸收,被认为是一种有前景的ETL。不幸的是,SnO ETL存在高功函数(WF)的问题,这大大降低了电荷传输和收集的能力。在此,我们采用一种简便的策略通过共调谐来降低SnO的WF。共调谐的SnO表现出3.64 eV的低WF,同时保持高透射率和高电导率。基于PM6:Y6且带有Co-SnO ETL的OSC显示出15.3%的显著功率转换效率,优于带有ZnO和SnO ETL的OSC。与带有原始SnO ETL的OSC相比,带有Co-SnO ETL的OSC在连续紫外线和发光二极管照射下表现出更强的光稳定性。Co-SnO薄膜的陷阱密度低于SnO薄膜,这可能有助于提高OSC的稳定性。