Timò Gianluca, Calicchio Marco, Abagnale Giovanni, Armani Nicola, Achilli Elisabetta, Cornelli Marina, Annoni Filippo, Schineller Bernd, Andreani Lucio Claudio
RSE, Strada Torre della Razza, le Mose, 29100 Piacenza, Italy.
Department of Physics, University of Pavia, Via Bassi 6, 27100 Pavia, Italy.
Materials (Basel). 2021 Feb 25;14(5):1066. doi: 10.3390/ma14051066.
We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements on the growth rate, background doping and morphology. It is shown that by adopting an innovative design of the MOVPE growth chamber and proper growth condition, the IV elements growth rate penalization due to As "carry over" can be eliminated and the background doping level in both IV and III-V semiconductors can be drastically reduced. In the temperature range 748-888 K, Ge and SiGe morphologies do not degrade when the semiconductors are grown in a III-V-contaminated MOVPE growth chamber. Critical morphology aspects have been identified for SiGeSn and III-Vs, when the MOVPE deposition takes place, respectively, in a As or Sn-contaminated MOVPE growth chamber. III-Vs morphologies are influenced by substrate type and orientation. The results are promising in view of the monolithic integration of group-IV with III-V compounds in multi-junction solar cells.
我们已在同一金属有机气相外延（MOVPE）生长腔中沉积了基于锗（Ge）、硅锗（SiGe）、硅锗锡（SiGeSn）、砷化铝（AlAs）、砷化镓（GaAs）、磷化铟镓（InGaP）和砷化铟镓（InGaAs）的结构，以研究IV族元素与III - V族元素之间的交叉影响对生长速率、背景掺杂和形貌的作用。结果表明，通过采用创新设计的MOVPE生长腔和适当的生长条件，可以消除由于砷的“残留”导致的IV族元素生长速率下降，并且可以大幅降低IV族和III - V族半导体中的背景掺杂水平。在748 - 888K的温度范围内，当半导体在受III - V族污染的MOVPE生长腔中生长时，锗和硅锗的形貌不会退化。当MOVPE沉积分别在受砷或锡污染的MOVPE生长腔中进行时，已确定了硅锗锡和III - V族化合物的关键形貌特征。III - V族化合物的形貌受衬底类型和取向的影响。鉴于在多结太阳能电池中将IV族与III - V族化合物进行单片集成，这些结果很有前景。
