Steep Switching Characteristics of Partially Gated --- Silicon-Nanowire Transistors.

In this study, we examine the electrical characteristics of --- silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10 A, an on/off current ratio of ˜10, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the -channel operation mode.