Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 136-701, Republic of Korea.
Nano Lett. 2015 Aug 12;15(8):4905-13. doi: 10.1021/acs.nanolett.5b00606. Epub 2015 Jul 31.
In this study, we present the steep switching characteristics of bendable feedback field-effect transistors (FBFETs) consisting of p(+)-i-n(+) Si nanowires (NWs) and dual-top-gate structures. As a result of a positive feedback loop in the intrinsic channel region, our FBFET features the outstanding switching characteristics of an on/off current ratio of approximately 10(6), and point subthreshold swings (SSs) of 18-19 mV/dec in the n-channel operation mode and of 10-23 mV/dec in the p-channel operation mode. Not only can these devices operate in n- or p-channel modes, their switching characteristics can also be modulated by adjusting the gate biases. Moreover, the device maintains its steep SS characteristics, even when the substrate is bent. This study demonstrates the promising potential of bendable NW FBFETs for use as low-power components in integrated circuits or memory devices.
在这项研究中，我们展示了由 p(+)-i-n(+)硅纳米线 (NWs) 和双顶栅结构组成的可弯曲反馈场效应晶体管 (FBFET) 的陡峭开关特性。由于本征沟道区域中的正反馈回路，我们的 FBFET 具有出色的开关特性，其导通/关断电流比约为 10(6)，在 n 通道工作模式下的亚阈值摆幅 (SS) 为 18-19 mV/dec，在 p 通道工作模式下的 SS 为 10-23 mV/dec。这些器件不仅可以在 n 或 p 通道模式下工作，其开关特性还可以通过调整栅极偏置来进行调制。此外，即使基底弯曲，该器件仍能保持陡峭的 SS 特性。这项研究表明，可弯曲 NW FBFET 有望用作集成电路或存储设备中的低功耗组件。
