Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea.
Nanotechnology. 2018 Oct 26;29(43):435202. doi: 10.1088/1361-6528/aad9df. Epub 2018 Aug 13.
In this paper, we describe the feedback and tunneling operations of a dual top gate field-effect transistor (FET) with a p -i-n doped silicon nanowire channel. The transistor functions selectively in either a feedback FET (FBFET) or a tunneling FET mode by modulating the source-to-drain voltage, and it features an outstanding subthreshold swing characteristic of 6.15 mV dec with an on/off current ratio (I /I ) of approximately 10 in the feedback operating mode and of 41.3 mV dec with I /I of ∼10 in the tunneling operating mode. Moreover, our device in the FBFET operation mode has memory characteristics with a retention time of 10 s and a program/erase endurance up to 10 cycles owing to the positive feedback loop in the channel region. This study demonstrates the promising potential of our devices in the development of multifunctional electronics.
在本文中，我们描述了具有 p-i-n 掺杂硅纳米线沟道的双顶栅场效应晶体管（FET）的反馈和隧道操作。通过调制源漏电压，晶体管选择性地工作在反馈 FET（FBFET）或隧道 FET 模式下，并且在反馈工作模式下具有出色的亚阈值摆幅特性，为 6.15 mV dec，在隧道工作模式下的 I / I 约为 10，亚阈值摆幅特性为 41.3 mV dec。此外，由于在沟道区域中存在正反馈环，我们的器件在 FBFET 工作模式下具有 10 s 的保持时间和高达 10 个循环的编程/擦除耐久性的存储特性。本研究表明，我们的器件在多功能电子学的发展中具有广阔的应用前景。
