Geum Dae-Myeong, Kim Suhyun, Khym JiHoon, Lim Jinha, Kim SeongKwang, Ahn Seung-Yeop, Kim Tae Soo, Kang Kibum, Kim SangHyeon
School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea.
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Daejeon, 34141, Republic of Korea.
Small. 2021 Apr;17(17):e2007357. doi: 10.1002/smll.202007357. Epub 2021 Mar 17.
A high-speed and broadband 5 × 5 photodetector array based on MoS /In Ga As heterojunction is successfully demonstrated to take full advantage of the type-II band-aligned multilayer MoS /In Ga As. The fabricated devices exhibit good uniformity in the Raman spectrum and clear rectifying characteristics. The fabricated MoS /In Ga As photodetectors show good optical performances at a broad wavelength range showing high responsivities corresponding to the detectivity of ≈10 Jones at -3 V for the incident broadband light from 400 to 1550 nm. A very fast photoresponse is also obtained with a small rise/fall time in the order of microseconds both for visible (638 nm) and shortwave infrared (1310 nm). Finally, the image scanning properties of MoS /In Ga As devices are demonstrated for visible and infrared light, indicating that the suggested device is one of the promising options for future broadband imager, which can be integrated on the focal plane arrays (FPAs).
基于MoS /In Ga As异质结的高速宽带5×5光电探测器阵列成功展示，充分利用了II型能带对齐的多层MoS /In Ga As。所制备的器件在拉曼光谱中表现出良好的均匀性和明显的整流特性。所制备的MoS /In Ga As光电探测器在宽波长范围内表现出良好的光学性能，对于400至1550 nm的入射宽带光，在-3 V时具有与约10琼斯的探测率相对应的高响应度。对于可见光（638 nm）和短波红外光（1310 nm），还获得了非常快的光响应，上升/下降时间很短，在微秒量级。最后，展示了MoS /In Ga As器件对可见光和红外光的图像扫描特性，表明所建议的器件是未来宽带成像器的有前途的选择之一，可集成在焦平面阵列（FPA）上。
