Arrayed MoS -In Ga As van der Waals Heterostructure for High-Speed and Broadband Detection from Visible to Shortwave-Infrared Light.

A high-speed and broadband 5 × 5 photodetector array based on MoS /In Ga As heterojunction is successfully demonstrated to take full advantage of the type-II band-aligned multilayer MoS /In Ga As. The fabricated devices exhibit good uniformity in the Raman spectrum and clear rectifying characteristics. The fabricated MoS /In Ga As photodetectors show good optical performances at a broad wavelength range showing high responsivities corresponding to the detectivity of ≈10 Jones at -3 V for the incident broadband light from 400 to 1550 nm. A very fast photoresponse is also obtained with a small rise/fall time in the order of microseconds both for visible (638 nm) and shortwave infrared (1310 nm). Finally, the image scanning properties of MoS /In Ga As devices are demonstrated for visible and infrared light, indicating that the suggested device is one of the promising options for future broadband imager, which can be integrated on the focal plane arrays (FPAs).