Wan Xi, Miao Xin, Yao Jie, Wang Shuai, Shao Feng, Xiao Shaoqing, Zhan Runze, Chen Kun, Zeng Xiaoliang, Gu Xiaofeng, Xu Jianbin
Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China.
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology and Guangdong Province Key Laboratory of Display Material, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
Adv Mater. 2021 Apr;33(16):e2100260. doi: 10.1002/adma.202100260. Epub 2021 Mar 18.
Chemical vapor deposition (CVD) has been widely used to synthesize high-quality 2D transition-metal dichalcogenides (TMDCs) from different precursors. At present, quantitative control of the precursor with high precision and good repeatability is still challenging. Moreover, the process to synthesize TMDCs with designed patterns is complicated. Here, by using an industrial inkjet-printer, an in situ aqueous precursor with robust usage control at the picogram (10 g) level is achieved, and by precisely tuning the inkjet-printing parameters, followed by a rapid heating process, large-area patterned TMDC films with centimeter size and good thickness controllability, as well as heterostructures of the TMDCs, are achieved facilely, and high-quality single-domain monolayer TMDCs with millimeter-size can be easily synthesized within 30 s (corresponding to a growth rate up to 36.4 µm s ). The resulting monolayer MoS and MoSe exhibits excellent electronic properties with carrier mobility up to 21 and 54 cm V s , respectively. The study paves a simple and robust way for the in situ ultrafast and patterned growth of high-quality TMDCs and heterostructures with promising industrialization prospects. Moreover, this ultrafast and green method can be easily used for synthesis of other 2D materials with slight modification.
化学气相沉积（CVD）已被广泛用于从不同前驱体合成高质量的二维过渡金属二硫属化物（TMDCs）。目前，高精度且具有良好重复性的前驱体定量控制仍然具有挑战性。此外，合成具有设计图案的TMDCs的过程很复杂。在此，通过使用工业喷墨打印机，实现了一种在皮克（10⁻¹² g）水平上具有强大使用控制能力的原位水性前驱体，并且通过精确调整喷墨打印参数，随后进行快速加热过程，轻松实现了具有厘米尺寸和良好厚度可控性的大面积图案化TMDC薄膜以及TMDCs的异质结构，并且能够在30秒内轻松合成毫米尺寸的高质量单畴单层TMDCs（对应高达36.4 µm s⁻¹的生长速率）。所得的单层MoS₂和MoSe₂分别表现出优异的电子性能，载流子迁移率高达21和54 cm² V⁻¹ s⁻¹。该研究为高质量TMDCs和具有广阔工业化前景的异质结构的原位超快和图案化生长铺平了一条简单而可靠的道路。此外，这种超快且绿色的方法只需稍加修改就可轻松用于合成其他二维材料。
