Katase Takayoshi, Takahashi Yudai, He Xinyi, Tadano Terumasa, Ide Keisuke, Yoshida Hideto, Kawachi Shiro, Yamaura Jun-Ichi, Sasase Masato, Hiramatsu Hidenori, Hosono Hideo, Kamiya Toshio
Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan.
National Institute for Materials Science, Sengen, Tsukuba 305-0047, Japan.
Sci Adv. 2021 Mar 19;7(12). doi: 10.1126/sciadv.abf2725. Print 2021 Mar.
Material properties depend largely on the dimensionality of the crystal structures and the associated electronic structures. If the crystal-structure dimensionality can be switched reversibly in the same material, then a drastic property change may be controllable. Here, we propose a design route for a direct three-dimensional (3D) to 2D structural phase transition, demonstrating an example in (Pb Sn )Se alloy system, where Pb and Sn have similar s pseudo-closed shell configurations, but the former stabilizes the 3D rock-salt-type structure while the latter a 2D layered structure. However, this system has no direct phase boundary between these crystal structures under thermal equilibrium. We succeeded in inducing the direct 3D-2D structural phase transition in (Pb Sn )Se alloy epitaxial films by using a nonequilibrium growth technique. Reversible giant electronic property change was attained at ~ 0.5 originating in the abrupt band structure switch from gapless Dirac-like state to semiconducting state.
材料特性在很大程度上取决于晶体结构的维度以及相关的电子结构。如果在同一材料中晶体结构维度能够可逆地切换,那么剧烈的特性变化可能是可控的。在此,我们提出一种从三维(3D)到二维(2D)结构直接相变的设计路线,并在(PbSn)Se合金体系中展示了一个例子,其中Pb和Sn具有相似的s类近闭壳层构型,但前者稳定3D岩盐型结构,而后者稳定2D层状结构。然而,在热平衡条件下,该体系在这些晶体结构之间不存在直接的相界。我们通过使用非平衡生长技术成功地在(PbSn)Se合金外延薄膜中诱导出直接的3D - 2D结构相变。在约0.5处实现了可逆的巨大电子特性变化,这源于能带结构从无隙狄拉克类状态到半导体状态的突然转变。