Han Shun, Xia Hao, Lu YouMing, Hu Sirong, Zhang DaoHua, Xu Wangying, Fang Ming, Liu WenJun, Cao PeiJiang, Zhu DeLiang
College of Materials Science and Engineering, Shenzhen University, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen 518060, China.
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore.
ACS Omega. 2021 Mar 3;6(10):6699-6707. doi: 10.1021/acsomega.0c05555. eCollection 2021 Mar 16.
High-performance solar-blind UV detector with high response and fast speed is needed in multiple types of areas, which is hard to achieve in one device with a simple structure and device fabrication process. Here, the effects of Ag nanoparticles (NPs) with different sizes on UV response characteristics of the device are studied, the Ag NPs with different sizes that are made from a simple vacuum anneal method. Ag NPs with different sizes could modulate the peak response position of the mixed-phase MgZnO detector from near UV range (350 nm) to deep UV range (235 nm), and the enhancement effect of the Ag NPs on the UV response differs much with the crystal structure and the basic UV response of the MgZnO thin film. When high density 20-40 nm Ag NPs is induced, the deep UV (235 nm) response of the mixed-phase MgZnO detector is increased by 226 times, the / ratio of the modified device is increased by 17.5 times. The slight enhancement in UV light intensity from 20 to 40 nm Ag NPs induces multiple tunnel breakdown phenomena within the mixed-phase MgZnO thin film, which is the main reason for the abnormal great enhancement effect on deep UV response of the device, so the recovery speed of the modified device is not influenced. Therefore, Ag NPs with different sizes could effectively modulate the UV response peak position of mixed-phase MgZnO thin films, and the introduction of Ag NPs with high density and small size is a simple way to greatly increase the sensitivity of the mixed-phase MgZnO detector at deep UV light without decreasing the device speed.
多种领域都需要具有高响应和快速速度的高性能日盲紫外探测器，而这在结构简单且器件制造工艺单一的设备中很难实现。在此，研究了不同尺寸的银纳米颗粒（NPs）对器件紫外响应特性的影响，这些不同尺寸的银纳米颗粒通过简单的真空退火方法制备而成。不同尺寸的银纳米颗粒可将混合相MgZnO探测器的峰值响应位置从近紫外范围（350 nm）调制到深紫外范围（235 nm），并且银纳米颗粒对紫外响应的增强效果因MgZnO薄膜的晶体结构和基本紫外响应而有很大差异。当引入高密度的20 - 40 nm银纳米颗粒时，混合相MgZnO探测器的深紫外（235 nm）响应提高了226倍，改进后器件的 / 比提高了17.5倍。从20到40 nm银纳米颗粒引起的紫外光强度轻微增强在混合相MgZnO薄膜内诱导了多次隧道击穿现象，这是器件深紫外响应出现异常大幅增强效果的主要原因，因此改进后器件的恢复速度不受影响。所以，不同尺寸的银纳米颗粒可有效调制混合相MgZnO薄膜的紫外响应峰值位置，并且引入高密度小尺寸的银纳米颗粒是一种在不降低器件速度的情况下大幅提高混合相MgZnO探测器在深紫外光下灵敏度的简单方法。
