State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials , Sun Yat-sen University , Guangzhou 510275 , P. R. China.
ACS Appl Mater Interfaces. 2018 Jul 5;10(26):22419-22426. doi: 10.1021/acsami.8b05336. Epub 2018 Jun 22.
Solar-blind ultraviolet (SBUV) detection has important applications in wireless secure communication, early warning, and so forth. However, the desired key device for SBUV detection and high-sensitivity and low-noise "sandwich" photodetector with large detective area is difficult to be fabricated because it is usually hard for traditional wide band gap semiconductors to boast both high conductivity and high SBUV transparency. Here, we proposed to use graphene as the transparent conductive layer to form graphene/β-GaO heterojunction. With the help of large-area graphene and hot carrier multiplication, a SBUV photodetector with large detective area, low dark current, and high sensitivity was successfully assembled. Its photoresponsivity is 1-3 orders of magnitude higher than that of the conventional SBUV photodetectors, and its response speed can rival the best device ever reported.
宽禁带半导体材料由于同时具备高导电性和高太阳盲紫外（SBUV）透过率较为困难，因此，通常难以制备出用于 SBUV 探测的理想关键器件和高灵敏度、低噪声、大探测面积的“三明治”型光电探测器。在此，我们提出使用石墨烯作为透明导电层来形成石墨烯/β-GaO 异质结。借助大面积石墨烯和热载流子倍增，成功组装出具有大探测面积、低暗电流和高灵敏度的 SBUV 光电探测器。其光响应率比传统的 SBUV 光电探测器高出 1-3 个数量级，响应速度可与已报道的最佳器件相媲美。
