Saito Yumi, Matsuno Takamichi, Guo Quansheng, Mori Takao, Kashiwagi Makoto, Shimojima Atsushi, Wada Hiroaki, Kuroda Kazuyuki
Department of Applied Chemistry, Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan.
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
ACS Appl Mater Interfaces. 2021 Apr 7;13(13):15373-15382. doi: 10.1021/acsami.0c23133. Epub 2021 Mar 25.
Metal oxides are considered suitable candidates for thermoelectric materials owing to their high chemical stabilities. The formation of ordered nanopores within these materials, which decreases thermal conductivity (κ), has attracted significant interest. However, the electrical conductivity (σ) of reported nanoporous metal oxides is low, owing to electron scattering at the thin pore walls and many grain boundaries formed by small crystallites. Therefore, a novel synthesis method that can control pore walls while forming relatively large crystallites to reduce κ and retain σ is required. In this study, we used indium tin oxide (ITO), which is a typical example among metal oxides with high σ. Nanoporous ITOs with large crystallite sizes of several hundred nanometers and larger were successfully prepared using indium chloride as a source of indium. The pore sizes were varied using colloidal silica nanoparticles with different particle sizes as templates. The crystal phase and nanoporous structure of ITO were preserved after spark plasma sintering at 723 K and 80 MPa. The κ was significantly lower than that reported for bulk ITO due to the phonon scattering caused by the nanoporous structure and thin pore walls. There was a limited decrease in σ even with high porosity. These findings show that κ and σ are independently controllable through the precise control of the structure. The control of the thickness of the pore walls at tens of nanometers was effective for the selective scattering of phonons, while almost retaining electron mobility. The remarkable preservation of σ was attributed to the large crystallites that maintained paths for electron conduction and decreased electron scattering at the grain boundaries.
由于金属氧化物具有高化学稳定性,它们被认为是热电材料的合适候选者。在这些材料中形成有序纳米孔可降低热导率(κ),这引起了人们的极大兴趣。然而,由于电子在薄孔壁处的散射以及由小晶粒形成的许多晶界,报道的纳米多孔金属氧化物的电导率(σ)较低。因此,需要一种新颖的合成方法,该方法能够在形成相对较大的微晶以降低κ并保持σ的同时控制孔壁。在本研究中,我们使用了氧化铟锡(ITO),它是具有高σ的金属氧化物中的典型例子。使用氯化铟作为铟源成功制备了具有数百纳米及更大尺寸的大晶粒纳米多孔ITO。使用不同粒径的胶体二氧化硅纳米颗粒作为模板来改变孔径。在723 K和80 MPa下进行火花等离子烧结后,ITO的晶相和纳米多孔结构得以保留。由于纳米多孔结构和薄孔壁引起的声子散射,κ显著低于块状ITO的报道值。即使具有高孔隙率,σ的降低也有限。这些发现表明,通过精确控制结构,κ和σ可以独立控制。将孔壁厚度控制在几十纳米对声子的选择性散射有效,同时几乎保持电子迁移率。σ的显著保留归因于大晶粒,其保持了电子传导路径并减少了晶界处的电子散射。